PDF HYI39SC128160FE Data sheet ( Hoja de datos )

Número de pieza	HYI39SC128160FE
Descripción	128-MBit Synchronous DRAM
Fabricantes	Qimonda
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No Preview Available ! HYB39SC128800FE HYB39SC128160FE HYI39SC128800FE H Y I 3 9 S C 1 2 8 1 6 0 F Ewww.DataSheet4U.com 128-MBit Synchronous DRAM Green Product SDRAM March 2007 Internet Data Sheet Rev. 1.1 1 page Internet Data Sheet 2 Pin Configuration HY[B/I]39SC128[800/160]FE 128-MBit Synchronous DRAM This chapter contains the pin configuration for the ×8, ×16 organization of the SDRAM. 2.1www.DataSheet4U.com Pin Configuration Listed below are the pin configurations sections for the various signals of the SDRAM. TABLE 3 Pin Configuration of the SDRAM Ball No. Name Pin Buffer Type Type Function Clock Signals ×8/×16 Organization 38 CLK I LVTTL Clock Signal CK 37 CKE I LVTTL Clock Enable Control Signals ×8/×16 Organization 18 RAS I LVTTL Row Address Strobe (RAS), Column Address Strobe (CAS), Write Enable (WE) 17 CAS I LVTTL 16 WE I LVTTL 19 CS I LVTTL Chip Select Address Signals ×8/×16 Organization 20 BA0 I LVTTL Bank Address Signals 1:0 21 BA1 I LVTTL 23 A0 I LVTTL Address Signal 9:0, Address Signal 10/Auto precharge 24 A1 I LVTTL 25 A2 I LVTTL 26 A3 I LVTTL 29 A4 I LVTTL 30 A5 I LVTTL 31 A6 I LVTTL 32 A7 I LVTTL 33 A8 I LVTTL 34 A9 I LVTTL 22 A10 I LVTTL 35 A11 I LVTTL Rev. 1.1, 2007-02 09072006-N4GC-EREN 5 5 Page Internet Data Sheet HY[B/I]39SC128[800/160]FE 128-MBit Synchronous DRAM 4 Electrical Characteristics 4.1 Operating Conditions www.DataSheet4U.com Parameter Input / Output voltage relative to VSS Voltage on VDD supply relative to VSS Voltage on VDDQ supply relative to VSS Operating Temperature for HYB... Operating Temperature for HYI... Storage temperature range Power dissipation per SDRAM component Data out current (short circuit) Symbol VIN, VOUT VDD VDDQ TA TA TSTG PD IOUT Limit Values Min. –1.0 –1.0 –1.0 0 –40 –55 — — Max. +4.6 +4.6 +4.6 +70 +85 +150 1 50 TABLE 7 Absolute Maximum Ratings Unit Note/ Test Condition V— V— V— °C — °C — °C — W— mA — Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values maycause irreversible damage to the integrated circuit. TABLE 8 DC Characteristics Parameter Symbol Values Min. Max. Unit Note/ Test Condition Supply Voltage VDD 3.0 3.6 V 1) I/O Supply Voltage VDDQ 3.0 3.6 V 1) Input high voltage VIH 2.0 VDDQ + 0.3 V 1)2) Input low voltage VIL –0.3 +0.8 V 1)2) Output high voltage (IOUT = – 4.0 mA) VOH 2.4 — V 1) Output low voltage (IOUT = 4.0 mA) VOL — 0.4 V 1) Input leakage current, any input IIL –5 +5 µA — (0 V < VIN < VDD, all other inputs = 0 V) Output leakage current IOL –5 +5 µA — (DQs are disabled, 0 V < VOUT < VDDQ) 1) All voltages are referenced to VSS 2) VIH may overshoot to VDDQ + 2.0 V for pulse width of < 4ns with 3.3 V. VIL may undershoot to -2.0 V for pulse width < 4.0 ns with 3.3 V. Pulse width measured at 50 % points with amplitude measured peak to DC reference. Rev. 1.1, 2007-02 09072006-N4GC-EREN 11 11 Page

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