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PDF HYI18T1G800B Data sheet ( Hoja de datos )

Número de pieza HYI18T1G800B
Descripción 1-Gbit Double-Data-Rate-Two SDRAM
Fabricantes Qimonda 
Logotipo Qimonda Logotipo



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No Preview Available ! HYI18T1G800B Hoja de datos, Descripción, Manual

July 2007
HY[B/I]18T1G400B[F/C](L)
HY[B/I]18T1G800B[F/C](L)
HY[B/I]18T1G16[0/7]B[F/C](L/V)
www.DataSheet4U.com
1-Gbit Double-Data-Rate-Two SDRAM
DDR2 SDRAM
RoHS Compliant Products
Internet Data Sheet
Rev. 1.3

1 page




HYI18T1G800B pdf
Internet Data Sheet
HY[B/I]18T1G[40/80/16]0B[C/F](L/V)
1-Gbit Double-Data-Rate-Two SDRAM
1.2 Description
The 1-Gbit DDR2 DRAM is a high-speed Double-Data-Rate-
Two CMOS Synchronous DRAM device, containing
1,073,741,824 bits and internally configured as anoctal
quadbank DRAM. The 1-Gbit device is organized as either
32 Mbit ×4 I/O ×8 banks, 16 Mbit ×8 I/O ×8 banks or 8 Mbit
www.DataShe×e1t46UI.c/Oom×8 banks chip. These devices achieve high speed
transfer rates starting at 400 Mb/sec/pin for general
applications.
The device is designed to comply with all DDR2 SDRAM key
features:
1. Posted CAS with additive latency,
2. Write latency = read latency - 1,
3. Normal and weak strength data-output driver,
4. Off-Chip Driver (OCD) impedance adjustment
5. On-Die Termination (ODT) function.
All of the control and address inputs are synchronized with a
pair of externally supplied differential clocks. Inputs are
latched at the cross point of differential clocks (CK rising and
CK falling). All I/Os are synchronized with a single ended
DQS or differential DQS-DQS pair in a source synchronous
fashion.
A 17-bit address bus for ×4 and ×8 organised components
and a 16 bit address bus for ×16 components is used to
convey row, column and bank address information in a RAS-
CAS multiplexing style.
The DDR2 device operates with a 1.8 V ± 0.1 V power
supply. An Auto-Refresh and Self-Refresh mode is provided
along with various power-saving power-down modes.
The functionality described and the timing specifications
included in this data sheet are for the DLL Enabled mode of
operation.
The DDR2 SDRAM is available in P(G)-TFBGA-68 and P(G)-
TFBGA-84 packages.
Product Type
Org. Speed
TABLE 5
Ordering Information for Lead-Free Products (RoHS Compliant)
CAS-RCD-RP Latencies1)2)3) Clock (MHz) Package
Note
Standard Temperature Range (0 °C - +70 °C)
HYB18T1G400BF-2.5F ×4 DDR2-800D 5-5-5
HYB18T1G800BF-2.5F ×8
HYB18T1G160BF-2.5F ×16
HYB18T1G167BF-2.5F ×16
HYB18T1G400BF-2.5 ×4 DDR2-800E 6-6-6
HYB18T1G800BF-2.5 ×8
HYB18T1G160BF-2.5 ×16
HYB18T1G167BF-2.5 ×16
HYB18T1G400BF-3
×4 DDR2-667C 4-4-4
HYB18T1G800BF-3
×8
HYB18T1G160BF-3
×16
HYB18T1G167BF-3
×16
HYB18T1G400BF-3S
×4 DDR2-667D 5-5-5
HYB18T1G400BFL-3S ×4
HYB18T1G800BF-3S
×8
HYB18T1G800BFL-3S ×8
HYB18T1G160BF-3S
×16
HYB18T1G160BFL-3S ×16
HYB18T1G160BFV-3S ×16
HYB18T1G167BF-3S
×16
400 PG-TFBGA-68 4)
PG-TFBGA-84
PG-TFBGA-92
400 PG-TFBGA-68
PG-TFBGA-84
PG-TFBGA-92
333 PG-TFBGA-68
PG-TFBGA-84
PG-TFBGA-92
333 PG-TFBGA-68
PG-TFBGA-84
PG-TFBGA-92
Rev. 1.3, 2007-07
03062006-ZNH8-HURV
5

5 Page





HYI18T1G800B arduino
Internet Data Sheet
HY[B/I]18T1G[40/80/16]0B[C/F](L/V)
1-Gbit Double-Data-Rate-Two SDRAM
Ball#
Name
Ball
Type
J1
VDDL
PWR
J7
VSSDL
PWR
Not Connected ×4 Organizations
A1, A2, A8, A9,
www.DataSheeEt42U, .Fc9o,mH1,F1,
R7, H9, W1,
W2, W8, W9,
R3
NC
NC
Not Connected ×8 Organization
A1, A2, A8, A9, NC
R7, W1, W2,
W8, W9, R3
NC
Other Balls ×4×8 Organizations
K9
ODT
I
Buffer
Type
SSTL
Function
Power Supply
Power Supply
Not Connected
Not Connected
On-Die Termination Control
Abbreviation
I
O
I/O
AI
PWR
GND
NC
Description
Standard input-only ball. Digital levels.
Output. Digital levels.
I/O is a bidirectional input/output signal.
Input. Analog levels.
Power
Ground
Not Connected
TABLE 8
Abbreviations for Ball Type
Abbreviation
SSTL
LV-CMOS
CMOS
OD
TABLE 9
Abbreviations for Buffer Type
Description
Serial Stub Terminated Logic (SSTL_18)
Low Voltage CMOS
CMOS Levels
Open Drain. The corresponding ball has 2 operational states, active low and tristate, and
allows multiple devices to share as a wire-OR.
Rev. 1.3, 2007-07
03062006-ZNH8-HURV
11

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