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PDF WTC2309 Data sheet ( Hoja de datos )
| Número de pieza | WTC2309 | |
| Descripción | Enhancement Mode Power MOSFET | |
| Fabricantes | Weitron Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de WTC2309 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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P-Channel Enhancement
Mode Power MOSFET
3 DRAIN
1
GATE
www.DataSheet4U.com
Features:
*Super High Dense Cell Design For Low RDS(ON)
R DS(ON) <75m Ω@V GS =-10V
*Rugged and Reliable
*Simple Drive Requirement
*SOT-23 Package
2
SOURCE
WTC2309
DRAIN CURRENT
-3.7 AMPERES
DRAIN SOURCE VOLTAGE
-30 VOLTAGE
1
2
3
SOT-23
Maximum Ratings(TA=25℃ Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current 3 ,(TA=25˚C)
,(TA=70˚C)
VG S
ID
Pulsed Drain Current 1,2
Total Power Dissipation(TA=25˚C)
Maximum Thermal Resistance Junction-ambient 3
Operating Junction and Storage Temperature Range
IDM
PD
R θJA
TJ, Tstg
Value
-30
±20
-3.7
-3.0
-12
1.38
90
-55~+150
Unit
V
A
W
˚C/W
˚C
Device Marking
WTC2309=2309
WEITRON
http:www.weitron.com.tw
1/6
23-May-05
1 page  
WTC2309
12
10 I D = -3A
VDS = -24V
8
1000
f = 1.0MHz
Ciss
6
www.DataSheet4U.com4
2
100
Coss
Crss
0
02468
Q G , Total Gate Charge(nC)
Fig 7. Gate Charge Characteristics
10
1
5
9
13 17 21
25 29
-VDS, Drain-to-Source Voltage(V)
Fig 8. Typical Capacitance Characteristics
100 1
Duty factor = 0.5
10
1ms
1
10ms
0.1
TA = 25°C
Single Pulse
0.01
0.1
1
100ms
Is
DC
10 100
-VDS , Drain-to-Source Voltage(V)
Fig 9. Maximum Safe Operation Area
0.2
0.1
0.1
0.05
0.01
PDM
t
0.01
Single pulse
T
Duty factor = t / T
Peak Tj=PDM x R θ ja + Ta
R ja=270°C / W
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t, Pulse Width(s)
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig.11 Switching Time Waveform
VG
-4.5V
QGS
QG
QGD
Charge
Q
Fig.12 Gate Charge Waveform
WEITRON
http://www.weitron.com.tw
5/6
23-May-05
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet WTC2309.PDF ] | |
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