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WTC2306A fiches techniques PDF

Weitron Technology - Enhancement Mode Power MOSFET

Numéro de référence WTC2306A
Description Enhancement Mode Power MOSFET
Fabricant Weitron Technology 
Logo Weitron Technology 





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WTC2306A fiche technique
N-Channel Enhancement
Mode Power MOSFET
3 DRAIN
1
GATE
Features:www.DataSheet4U.com
*Super High Dense Cell Design For Low RDS(ON)
R DS(ON) <30mΩ@V GS =10V
*Rugged and Reliable
*Simple Drive Requirement
*SOT-23 Package
2
SOURCE
WTC2306A
DRAIN CURRENT
5 AMPERES
DRAIN SOURCE VOLTAGE
30 VOLTAGE
1
2
3
SOT-23
Maximum Ratings(TA=25℃ Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Con tinuous Drain Current 3 ,VGS @4.5V(TA
Pulsed Drain Current 1,2
,VGS @4.5V(TA
VG S
ID
IDM
Total Power Dissipation(TA=25˚C)
Maximum Thermal Resistance Junction-ambient 3
PD
R θJA
Operating Junction and Storage Temperature Range
TJ, Tstg
Value
30
±12
5
4
20
1.38
90
- 55~+150
Unit
V
A
W
˚C/W
˚C
Device Marking
WTC2306A=2306A
WEITRON
http:www.weitron.com.tw
1/6
13-May-05

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