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Numéro de référence | WTC2301 | ||
Description | Enhancement Mode Power MOSFET | ||
Fabricant | Weitron Technology | ||
Logo | |||
WTC2301
P-Channel Enhancement
Mode Power MOSFET
P b Lead(Pb)-Free
1
GATE
Features:
*Super High Dense Cell Design For Low RDS(ON)
R DS(ON) <100mΩ@V GS =-4.5V
*Rugged and Reliable
*Simple Drive Requirement
*SOT-23 Package
3 DRAIN
2
SOURCE
Applications
*Power Management in Notebook Computer
*Portable Equipment
*Battery Powered System
DRAIN CURRENT
-2.3 AMPERES
DRAIN SOURCE VOLTAGE
-20 VOLTAGE
1
2
3
SOT-23
Maximum Ratings(TA=25℃ Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current 3
Pulsed Drain Current 1,2
VG S
ID
IDM
Total Po wer Dis sipation(T A=25˚C)
(T A=75˚C)
PD
Maximum Junction-ambient3
Maximum Junction-case
Ambient Temperature
Case Temperature
RθJA
RθJC
Ta
Tc
wwOwp.eDraattaiSnhgeeJut4nUc.tcioomn Temperature Range
Storage Temperature Range
TJ
T stg
Value
-20
±8
-2.3
-8
0.9
0.57
140
100
150
150
150
-55~+150
Unit
V
A
A
W
˚C /W
˚C /W
˚C
˚C
˚C
˚C
Device Marking
WTC2301 = 01
WEITRON
http://www.weitron.com.tw
1/6
Rev.D 29-Mar-10
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Pages | Pages 6 | ||
Télécharger | [ WTC2301 ] |
No | Description détaillée | Fabricant |
WTC2301 | Enhancement Mode Power MOSFET | Weitron Technology |
WTC2301 | P-Channel Enhancement Mode Power MOSFET | Weitron Technology |
WTC2302 | Enhancement Mode Power MOSFET | Weitron Technology |
WTC2302 | N-Channel Enhancement Mode Power MOSFET | Weitron Technology |
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