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IRF730ALPBF fiches techniques PDF

International Rectifier - HEXFET Power MOSFET

Numéro de référence IRF730ALPBF
Description HEXFET Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRF730ALPBF fiche technique
SMPS MOSFET
PD-95114
IRF730AS/LPbF
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptable Power Supply
l High speed power switching
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
www.DataSheet4U.coDmrive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss Specified (See AN1001)
HEXFET® Power MOSFET
VDSS
400V
Rds(on) max ID
1.0
5.5A
D 2 Pak
TO-262
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V†
Continuous Drain Current, VGS @ 10V†
Pulsed Drain Current †
Power Dissipation
Linear Derating Factor
VGS
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Ġ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
5.5
3.5
22
74
0.6
± 30
4.6
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies:
l Single Transistor Flyback Xfmr. Reset
l Single Transistor Forward Xfmr. Reset
(Both US Line input only).
Notes  through † are on page 10
www.irf.com
1
3/16/04

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