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PDF TA32910Q Data sheet ( Hoja de datos )

Número de pieza TA32910Q
Descripción Asymmetric Thyristor
Fabricantes Dynex Semiconductor 
Logotipo Dynex Semiconductor Logotipo



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No Preview Available ! TA32910Q Hoja de datos, Descripción, Manual

Replaces March 1998 version, DS4680-2.1
APPLICATIONS
s High Frequency Applications
s High Power Choppers And Inverters
s Welding
s Ultrasonic Generators
s Induction Heating
s 400Hz UPS
www.DastaSPhWeMet4InUv.ecrotemrs
FEATURES
s Low Loss Asymmetrical Diffusion Structure
s High Interdigitated Amplifying Gate
s Gate Assisted Turn-off With Exclusive Bypass Diode
s Fully Characterised For Operation up to 40kHz
s Directly Compatible With 220-480 A.c. Mains
VOLTAGE RATINGS
Type Number
TA329 14 Q
TA329 12 Q
TA329 10 Q
Repetitive Peak
Off-state Voltage
V
DRM
V
1400
1200
1000
Repetitive Peak
Reverse Voltage
V
RRM
V
10
10
10
TA329..Q
TA329..Q
Asymmetric Thyristor
Advance Information
DS4680-3.0 January 2000
KEY PARAMETERS
VDRM
IT(RMS)
ITSM
dVdt
1400V
370A
2000A
1000V/µs
dI/dt
1000A/µs
tq 7.0µs
Lower voltage grades available.
CURRENT AND SURGE RATINGS
Symbol
Double Side Cooled
IT(RMS)
RMS value
Parameter
ITSM Surge (non-repetitive) on-state current
I2t I2t for fusing
Outline type code: MU86.
See Package Details for further information.
Conditions
Max. Units
Half sine wave, duty cycle 50%, T = 80oC,
case
Tj = 125˚C.
Tj = 125oC, tp = 1ms, VR = 0
t
p
10ms
370 A
2000
A
20 x 103 A2s
1/10

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TA32910Q pdf
TA329..Q
www.DataSheet4U.com
Notes:
1. VD 600V.
2. VR = DF451 Diode voltage drop.
3. R.C. snubber. C = 0.1µF, R = 33.
4. Double side cooled.
Fig.3 Maximum allowable peak on-state current vs pulse width for Tcase = 90˚C.
Notes:
1. dI/dt = 100A/µs.
2. VD 600V.
3. VR = DF451 Diode voltage drop.
4. R.C. snubber. C = 0.1µF, R = 33.
5. Double side cooled.
Fig.4 Energy per pulse for trapezoidal pulses
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