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Numéro de référence | H7NA80 | ||
Description | STH7NA80 | ||
Fabricant | STMicroelectronics | ||
Logo | |||
1 Page
STW7NA80
® STH7NA80FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
STW 7NA80
www.DataSheet4U.ScoTmH7NA80F I
V DSS
800 V
800 V
RDS(on)
< 1.9 Ω
< 1.9 Ω
ID
6.5 A
4A
s TYPICAL RDS(on) = 1.68 Ω
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
23
1
TO-247
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Pa ram et er
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS G ate-source Volt age
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM (•)
Ptot
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Derating Factor
VISO I nsulation W ithstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
October 1998
Valu e
ST W7NA80 STH7NA80FI
8 00
8 00
± 30
6.5 4
4 2.5
26 26
150 60
1.2 0.48
4000
-65 to 150
1 50
Unit
V
V
V
A
A
A
W
W /o C
V
oC
oC
1/10
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Pages | Pages 10 | ||
Télécharger | [ H7NA80 ] |
No | Description détaillée | Fabricant |
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