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Numéro de référence | 2SC5695 | ||
Description | Horizontal Deflection Output | ||
Fabricant | Toshiba Semiconductor | ||
Logo | |||
1 Page
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SC5695
Horizontal Deflection Output for High Resolution Display,
Color TV
2SC5695
Unit: mm
· High voltage: VCBO = 1500 V
· Low saturation voltage: VCE (sat) = 3 V (max)
· High speed: tf (2) = 0.1 µs (typ.)
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Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
1500
700
5
22
44
11
200
150
-55~150
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics (Tc = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-21F2A
Weight: 9.75 g (typ.)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Storage time
Switching time
Fall time
Storage time
Fall time
Symbol
Test Condition
ICBO
IEBO
V(BR) CEO
hFE (1)
hFE (2)
hFE (3)
VCE (sat)
VBE (sat)
fT
Cob
tstg (1)
tf (1)
tstg (2)
tf (2)
VCB = 1500 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 2 A
VCE = 5 V, IC = 10 A
VCE = 5 V, IC = 17 A
IC = 17 A, IB = 4.25 A
IC = 17 A, IB = 4.25 A
VCE = 10 V, IC = 0.1 A
VCB = 10 V, IE = 0, f = 1 MHz
ICP = 8 A, IB1 (end) = 1.4 A,
fH = 64 kHz
ICP = 8 A, IB1 (end) = 1.1 A,
fH = 100 kHz
Min Typ. Max Unit
¾¾
1 mA
¾ ¾ 10 mA
700 ¾ ¾ V
20 ¾ 50
8 ¾ 17 ¾
4.8 ¾ 8.3
¾¾ 3 V
¾ 1.0 1.5 V
¾ 2 ¾ MHz
¾ 280 ¾
pF
¾ 2.5
3
¾ 0.15 0.3
1.6 1.8
ms
¾ 0.1 0.15
1 2001-10-29
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Pages | Pages 5 | ||
Télécharger | [ 2SC5695 ] |
No | Description détaillée | Fabricant |
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