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C2229 fiches techniques PDF

Toshiba - NPN Transistor - 2SC2229

Numéro de référence C2229
Description NPN Transistor - 2SC2229
Fabricant Toshiba 
Logo Toshiba 





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C2229 fiche technique
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2SC2229
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
2SC2229
Black and White TV Video Output Applications
High-Voltage Switching Applications
Driver Stage Audio Amplifier Applications
Unit: mm
High breakdown voltage: VCEO = 150 V (min)
Low output capacitance: Cob = 5.0 pF (max)
High transition frequency: fT = 120 MHz (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 200 V
Collector-emitter voltage
VCEO 150 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 50 mA
Base current
Collector power dissipation
Junction temperature
Storage temperature range
IB 20 mA
PC 800 mW
Tj 150 °C
Tstg
55 to 150
°C
JEDEC
JEITA
TOSHIBA
TO-92MOD
2-5J1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.36 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-09
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