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PDF VRF154FL Data sheet ( Hoja de datos )
| Número de pieza | VRF154FL | |
| Descripción | RF Power Vertical MOSFET | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de VRF154FL (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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RF POWER VERTICAL MOSFET
The VRF154FL is a gold metallized silicon, n-channel RF power transistor de-
signed for broadband commercial and military applications requiring high power
and gain without compromising reliability, ruggedness, and inter-modulation
distortion.
VRF154FL
50V 600W 80MHz
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FEATURES
• Designed For 2 - 100MHz Operation
• 600W with 17dB Typical Gain @ 30MHz, 50V
• Excellent Stability & Low IMD
• Common Source Configuration
• Economical Flangeless Package
• Nitride Passivated
• Refractory Gold Metallization
Maximum Ratings
Symbol
VDD
VDGO
ID
VGS
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
Total Device Dissipation @ TC = 25°C
Storage Temperature Range
Operating Junction Temperature
All Ratings: TC = 25°C unless otherwise specified
VRF154FL
Unit
160
160
Volts
60 Amps
±40 Volts
1350
Watts
-65 to 150
200
°C
Static Electrical Characteristics
Symbol Parameter
V(BR)DSS
VDS(ON)
IDSS
IGSS
gfs
VGS(TH)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA)
On State Drain Voltage (ID(ON) = 40A, VGS = 10V)
Zero Gate Voltage Drain Current (VDS = 50V, VGS = 0V)
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
Forward Transconductance (VDS = 10V, ID = 20A)
Gate Threshold Voltage (VDS = 10V, ID = 100mA)
Min Typ Max Unit
160
180
3.0
5.0
Volts
20 mA
5.0 µA
16 mhos
2 5 Volts
Thermal Characteristics
Symbol
RθJC
Characteristic
Junction to Case Thermal Resistance
Microsemi Website - http://www.microsemi.com
Min Typ Max Unit
0.13 °C/W
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet VRF154FL.PDF ] | |
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