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PDF J291 Data sheet ( Hoja de datos )
| Número de pieza | J291 | |
| Descripción | P-Channel MOSFET ( Transistor ) - 2SJ291 | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de J291 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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2SJ291
Silicon P-Channel MOS FET
www.DataSheet4U.com
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for switching regulator, DC-DC converter
• Avalanche ratings
Outline
TO-220AB
D 123
1. Gate
G 2. Drain
(Flange)
3. Source
S
November 1996
1 page  
www.DataSheet4U.com
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–2.0
Pulse Test
–1.6
–1.2
–0.8
–0.4
–20 A
–10 A
I D = –5 A
0 –2 –4 –6 –8 –10
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
0.1
0.05
VGS = –4 V
–10 V
0.02
0.01
–1
–2 –5 –10 –20 –50 –100
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.2
Pulse Test
0.16
0.12
0.08 VGS = –4 V
0.04 –10 V
I D = –20 A
–5 A
–10 A
–5 A
–10 A
–20 A
0
–40 0 40 80 120 160
Case Temperature Tc (°C)
2SJ291
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet J291.PDF ] | |
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