|
|
PDF LM2722MX Data sheet ( Hoja de datos )
| Número de pieza | LM2722MX | |
| Descripción | High Speed Synchronous/Asynchronous MOSFET Driver | |
| Fabricantes | National Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de LM2722MX (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
December 2001
LM2722
High Speed Synchronous/Asynchronous MOSFET Driver
General Description
The LM2722, part of the LM2726 family, is designed to be
used with multi-phase controllers. This part differs from the
LM2726 by changing the functionality of the SYNC_EN pin
from a whole chip enable to a low side MOSFET enable. As
a result, the SYNC_EN pin now provides control between
Synchronous and Asynchronous operations. Having this
control can be advantageous in portable systems since
Asynchronous operations can be more efficient at very light
loads.
The LM2722 drives both top and bottom MOSFETs in a
push-pull structure simultaneously. It takes a logic level
PWM input and splits it into two complimentary signals with
a typical 20ns dead time in between. The built-in
cross-conduction protection circuitry prevents the top and
bottom FETs from turning on simultaneously. The
cross-conduction protection circuitry detects both the driver
outputs and will not turn on a driver until the other driver
output is low. With a bias voltage of 5V, the peak sourcing
and sinking current for each driver of the LM2722 is typically
3A. In an SO-8 package, each driver is able to handle 50mA
average current. Input UVLO (Under-Voltage-Lock-Out)
forces both driver outputs low to ensure proper power-up
and power-down operation. The gate drive bias voltage
needed by the high side MOSFET is obtained through an
external bootstrap. Minimum pulse width is as low as 55ns.
Features
n Synchronous or Asynchronous Operation
n Adaptive shoot-through protection
n Input Under-Voltage-Lock-Out
n Typical 20ns internal delay
n Plastic 8-pin SO package
Applications
n Driver for LM2723 Intel Mobile Northwood CPU core
power supply.
n High Current DC/DC Power Supplies
n High Input Voltage Switching Regulators
n Fast Transient Microprocessors
Typical Application
Note: National is an Intel Mobile Voltage Positioning (IMVP) licensee.
© 2001 National Semiconductor Corporation DS200289
20028901
www.national.com
1 page  
Electrical Characteristics (Continued)
VCC = CBOOT = 5V, SW = GND = 0V, unless otherwise specified. Typicals and limits appearing in plain type apply for TA =
TJ = +25˚C. Limits appearing in boldface type apply over the entire operating temperature range.
Symbol
Parameter
Condition
Min Typ Max Units
Ileak_EN
SYNC_EN Pin Leakage
Current
EN = 5V
EN = 0V
−2 2
µA
−2 2
ton_min
Minimum Positive Input
Pulse Width
55
toff_min
(Note 4)
Minimum Negative Input
Pulse Width
ns
55
(Note 5)
VIH_PWM
VIL_PWM
PWM_IN High Level Input
Voltage
PWM_IN Low Level Input
Voltage
When PWM_IN pin goes
high from 0V
When PWM_IN pin goes
low from 5V
2.4
V
0.8
Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating ratings are conditions under which the device operates
correctly. Operating Ratings do not imply guaranteed performance limits.
Note 2: Maximum allowable power dissipation is a function of the maximum junction temperature, TJMAX, the junction-to-ambient thermal resistance, θJA, and the
ambient temperature, TA. The maximum allowable power dissipation at any ambient temperature is calculated using: PMAX = (TJMAX-TA) / θJA. The junction-to-
ambient thermal resistance, θJA, for the LM2722, it is 172˚C/W. For a TJMAX of 150˚C and TA of 25˚C, the maximum allowable power dissipation is 0.7W.
Note 3: ESD machine model susceptibility is 100V.
Note 4: If after a rising edge, a falling edge occurs sooner than the specified value, the IC may intermittently fail to turn on the bottom gate when the top gate is
off. As the falling edge occurs sooner and sooner, the driver may start to ignore the pulse and produce no output.
Note 5: If after a falling edge, a rising edge occurs sooner than the specified value, the IC may intermittently fail to turn on the top gate when the bottom gate is
off. As the rising edge occurs sooner and sooner, the driver may start to ignore the pulse and produce no output.
Timing Diagram
20028903
5 www.national.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet LM2722MX.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| LM2722M | High Speed Synchronous/Asynchronous MOSFET Driver | National Semiconductor |
| LM2722MX | High Speed Synchronous/Asynchronous MOSFET Driver | National Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |