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C30T03QL-11A fiches techniques PDF

Nihon Inter Electronics - Schottky Barrier Diode

Numéro de référence C30T03QL-11A
Description Schottky Barrier Diode
Fabricant Nihon Inter Electronics 
Logo Nihon Inter Electronics 





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C30T03QL-11A fiche technique
S B D T y p e : C30T03QL-11A
OUTLINE DRAWING
FEATURES
*Tabless TO-220
*Dual Diodes – Cathode Common
*Low Forward Voltage Drop
*High Surge Capability
*Tj=150 °C operation
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Maximum Ratings
Rating
Repetitive Peak Reverse Voltage
Repetitive Peak Surge Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Symbol
VRRM
VRRSM
IO
IF(RMS)
IFSM
Tjw
Tstg
Approx Net Weight: 1.45g
C30T03QL-11A
30
35(pulse width 1µs duty 1/50)
30
Tc=105°C
50 Hz Full Sine Wave
Resistive Load
33.3
250
50Hz Full Sine Wave ,1cycle
Non-repetitive
-40 to +150
-40 to +150
Unit
V
V
A
A
A
°C
°C
Electrical Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
Symbol
Conditions
IRM
Tj= 25°C, VRM= VRRM
per arm
VFM
Tj= 25°C, IFM= 15 A
per arm
Rth(j-c) Junction to Case
Min. Typ. Max. Unit
- - 15 mA
- - 0.49 V
- - 1.5 °C /W

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