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Numéro de référence | L2SC4617xT1 | ||
Description | General Purpose Transistors NPN Silicon | ||
Fabricant | Leshan Radio Company | ||
Logo | |||
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
COLLECTOR
3
L2SC4617*T1
www.DataSheet4U.com
1
BASE
2
EMITTER
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Limits
60
50
7
0.15
Unit
V
V
V
A
PC 0.15 W
Tj 150 ˚C
Tstg
−55~+150
˚C
3
1
2
SC-89
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage VCE(sat)
DC current transfer ratio
hFE
Transition frequency
fT
Output capacitance
Cob
Min.
60
50
7
−
−
−
120
−
−
Typ.
−
−
−
−
−
−
−
180
2.0
Max.
−
−
−
0.1
0.1
0.5
560
−
3.5
Unit
V
V
V
µA
µA
V
−
MHz
pF
Conditions
IC=50µA
IC=1µA
IE=50µA
VCB=60V
VEB=7V
IC/IB=50mA/5mA
VCE=6V, IC=1mA
VCE=12V, IE=2mA, f=30MHz
VCB=12V, IE=0A, f=1MHz
!Device marking
L2SC4617QT1=BQ L2SC4617RT1=BR L2SC4617ST1=BS
!hFE values are classified as follows:
Item
hFE
Q
120~270
R
180~390
S
270~560
L2SC4617*T1-1/4
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Pages | Pages 4 | ||
Télécharger | [ L2SC4617xT1 ] |
No | Description détaillée | Fabricant |
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