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PDF L2SB1197KxLT1 Data sheet ( Hoja de datos )
| Número de pieza | L2SB1197KxLT1 | |
| Descripción | Low Frequency Transistor PNP Silicon | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Low Frequency Transistor
PNP Silicon
L2SB1197K*LT1
FEATURE
ƽHigh current capacity in compact package.
IC = í0.8A.
www.DataSheet4U.com ƽEpitaxial planar type.
ƽNPN complement: L2SD1781K
ƽPb-Free Package is available.
3
1
2
SOT– 23 (TO–236AB)
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L2SB1197KQLT1
L2SB1197KQLT1G
L2SB1197KRLT1
L2SB1197KRLT1G
AHQ
AHQ
(Pb-Free)
AHR
AHR
(Pb-Free)
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
MAXIMUM RATINGS(Ta=25qC)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−40
−32
−5
−0.8
0.2
150
−55 to 150
Unit
V
V
V
A
W
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25qC)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO −40
Collector-emitter breakdown voltage BVCEO −32
Emitter-base breakdown voltage
BVEBO −5
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
DC current transfer ratio
hFE 120
Transition frequency
fT −
Output capacitance
Cob −
Typ. Max. Unit
−−V
−−V
−−V
− −0.5 µA
− −0.5 µA
− −0.5
V
− 390 −
200 − MHz
12 30 pF
hFE values are classified as follows :
Item(*)
Q
R
hFE 120~270 180~390
1
BASE
3
COLLECTOR
2
EMITTER
Conditions
IC= −50µA
IC= −1mA
IE= −50µA
VCB= −20V
VEB= −4V
IC/IB= −0.5A/ −50mA
VCE= −3V, IC= −100mA
VCE= −5V, IE=50mA, f=100MHz
VCB= −10V, IE=0A, f=1MHz
L2SB1197KLT1-1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet L2SB1197KxLT1.PDF ] | |
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