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Numéro de référence | S1M8833 | ||
Description | (S1M8831A / S1M8833) FRACTIONAL-N RF/INTEGER-N IF DUAL PLL | ||
Fabricant | Samsung semiconductor | ||
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FRACTIONAL-N RF/INTEGER-N IF DUAL PLL
S1M8831A/33
INTRODUCTION
The S1M8831A/33 is a Fractional-N frequency synthesizer with integrated
prescalers, designed for RF operation up to 1.2GHz/K-PCS and for IF
operation up to 520MHz. The fractional-N synthesizer allows fast-locking,
low phase noise phase-locked loops to be built easily, thus having rapid
channel switching and reducing standby time for extended battery life. The
S1M8831A/33 based on ∑ - ∆ fractional-N techniques solves the fractional
spur problems in other fractional-N synthesizers based on charge pump
compensation. The synthesizer also has an additional feature that the
www.DataSheePt4CUS.c/oCmDMA channel frequency in steps of 10kHz can be accurately
programmed.
24-QFN-3.5×4.5
The S1M8831A/33 contains dual-modulus prescalers. The S1M8831A RF
synthesizer adopts an 8/9 prescaler (16/17 for the S1M8833) and the IF
synthesizer adopts an 8/9 prescaler. Phase detector gain is user-programmable for maximum flexibility to
address IS-95 CDMA and IMT2000. Various program-controlled power down options as well as low supply
voltage help the design of wireless cell phones having minimum power consumption.
Using the Samsung's proprietary digital phase-locked-loop technique, the S1M8831A/33 has a linear phase
detector characteristic and can be used for very stable, low noise PLLs. Supply voltage can range from 2.7V to
4.0V. The S1M8831A/33 is available in a 24-QFN package.
FEATURES
• High operating frequency dual synthesizer
— S1M8831A: 0.71 to 1.2GHz(RF)/ 45 to 520MHz(IF)
— S1M8833: 1.6 to 1.65GHz(RF)/ 45 to 520MHz(IF)
• Operating voltage range: 2.7 to 4.0V
• Low current consumption (S1M8831A: 5.0mA, S1M8833: 7.0mA)
• Selectable power saving mode (ICC = 1uA typical @ 3V)
• Dual-modulus prescaler and Fractional-N/Integer-N:
— S1M8831A
— S1M8833
— S1M8831A/33
(RF) 8/9
(RF) 16/17
(IF) 8/9
Fractional-N
Fractional-N
Integer-N
• Excellent in-band phase noise ( – 85dBc/Hz @ PCS, -90dBc/Hz @CDMA)
Improved fractional spurious performance ( < 80dBc)
• Frequency resolution (= 10kHz/64 @ fref = 9.84MHz)
• Fast channel switching time: < 500us
• Programmable charge pump output current: from 50uA to 800uA in 50uA steps
• Programmability via on-chip serial bus interface
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Pages | Pages 30 | ||
Télécharger | [ S1M8833 ] |
No | Description détaillée | Fabricant |
S1M8831A | (S1M8831A / S1M8833) FRACTIONAL-N RF/INTEGER-N IF DUAL PLL | Samsung semiconductor |
S1M8833 | (S1M8831A / S1M8833) FRACTIONAL-N RF/INTEGER-N IF DUAL PLL | Samsung semiconductor |
S1M8836 | FRACTIONAL-N RF/INTEGER-N IF DUAL PLL | Samsung semiconductor |
S1M8836X01-G0T0 | FRACTIONAL-N RF/INTEGER-N IF DUAL PLL | Samsung semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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