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2SA1516 fiches techniques PDF

ISC - SILICON PNP TRANSISTOR

Numéro de référence 2SA1516
Description SILICON PNP TRANSISTOR
Fabricant ISC 
Logo ISC 





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2SA1516 fiche technique
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1516
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -180V(Min)
·Good Linearity of hFE
·Complement to Type 2SC3907
www.DataSheet4U.com
APPLICATIONS
·Power amplifier applications
·Recommend for 80W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-180
V
VCEO Collector-Emitter Voltage
-180
V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-12 A
IBB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
-1.2 A
130 W
150
-55~150
isc Websitewww.iscsemi.cn

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