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PDF Q62702P1137 Data sheet ( Hoja de datos )

Número de pieza Q62702P1137
Descripción Infra-red Emitter 5mm
Fabricantes Siemens 
Logotipo Siemens Logotipo



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No Preview Available ! Q62702P1137 Hoja de datos, Descripción, Manual

GaAs-IR-Lumineszenzdioden
GaAs Infrared Emitters
SFH 415
SFH 416
www.DataSheet4U.com
Cathode
29
27
1.8
1.2
9.0
8.2
7.8
7.5
5.9
5.5
Area not flat
Chip position
4.8
4.2
Area not flat
6.9
0.6 6.1
0.4 5.7
5.5
0.6
0.4
GEO06645
5.9
5.5
1.8
1.2
29.5
27.5
Cathode (Diode)
Collector (Transistor)
4.0
3.4
Chip position
0.6
0.4
GEX06630
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
q GaAs-IR-Lumineszenzdioden, hergestellt
im Schmelzepitaxieverfahren
q Gute Linearität (Ie = f [IF]) bei hohen Strömen
q Sehr hoher Wirkungsgrad
q Hohe Zuverlässigkeit
q Hohe Impulsbelastbarkeit
q SFH 415: Gehäusegleich mit SFH 300,
SFH 203
Anwendungen
q IR-Fernsteuerung von Fernseh- und
Rundfunkgeräten, Videorecordern,
Lichtdimmern
q Gerätefernsteuerungen
Features
q GaAs infrared emitting diodes, fabricated in
a liquid phase epitaxy process
q Good linearity (Ie = f [IF]) at high currents
q High efficiency
q High reliability
q High pulse handling capability
q SFH 415: Same package as SFH 300,
SFH 203
Applications
q IR remote control of hi-fi and TV-sets, video
tape recorders, dimmers
q Remote control of various equipment
Semiconductor Group
1
1999-02-04

1 page




Q62702P1137 pdf
SFH 415
SFH 416
Relative spectral emission
Irel = f (λ)
100
%
Ι rel
80
OHRD1938
60
www.DataSheet4U.com
40
20
Radiant intensity
Ie
Ie 100 mA
=
f (IF)
Single pulse, tp = 20 µs
10 2
A
Ιe
Ι e 100 mA
OHR01551
10 1
10 0
10 -1
Max. permissible forward current
IF = f (TA)
120
Ι F mA
100
OHR00883
80
RthjA = 450 K/W
60
40
20
0
880 920 960 1000 nm 1060
λ
Forward current
IF = f (VF), single pulse, tp = 20 µs
10 1
ΙF A
OHR01554
10 0
10 -1
10 -2
10 -3 10 -2 10 -1 10 0 A 10 1
ΙF
0 0 20 40 60 80 100 ˚C 120
TA
Radiation characteristics SFH 415 Irel = f (ϕ)
40
30
20 10
0
ϕ
1.0
50
0.8
60 0.6
OHR01552
70 0.4
80 0.2
10 -2
90
10 -3
0 12 3 4 5 6V 8
VF
100
1.0 0.8 0.6
0.4
Radiation characteristics SFH 416 Irel = f (ϕ)
40˚ 30˚ 20˚ 10˚ 0˚
ϕ 1.0
50˚
0.8
60˚
0.6
OHR01553
70˚ 0.4
80˚ 0.2
90˚ 0
100˚
1.0 0.8 0.6
0.4
0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚
Semiconductor Group
5
0 20 40 60 80 100 120
Permissible pulse handling capability
IF = f (τ), TC = 25 °C,
duty cycle D = parameter
10 4
Ι F mA
5
D
=
tp
T
D = 0.005
tp
T
OHR00860
ΙF
0.01
0.02
10 3 0.1
0.05
0.2
5
0.5
10 2 DC
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2
tp
1999-02-04

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