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PDF P12PF06 Data sheet ( Hoja de datos )
| Número de pieza | P12PF06 | |
| Descripción | STP12PF06 | |
| Fabricantes | STMicroelectronics | |
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Hay una vista previa y un enlace de descarga de P12PF06 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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® STP12PF06
P - CHANNEL 60V - 0.18 Ω - 12A TO-220
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(o n)
STP12PF06
60 V
< 0.20 Ω
www.DataSheet4Us.comTYPICAL RDS(on) = 0.18 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE
s APPLICATION ORIENTED
CHARACTERIZATIONL
ID
12 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
Va l u e
Unit
VDS
VDGR
VG S
ID
ID
IDM(•)
Ptot
Drain-source Volt age (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
60
60
± 20
12
8.4
48
60
0.4
V
V
V
A
A
A
W
W /o C
dv/dt Peak Diode Recovery voltage slope
6 V/ns
Tstg Storage T emperature
-65 to 175
oC
Tj Max. Operating Junction Temperature
175
(•) Pulse width limited by safe operating area
( 1) ISD ≤ 12 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
oC
May 2000
1/8
1 page  
Normalized Gate Threshold Voltage vs
Temperature
STP12PF06
Normalized On Resistance vs Temperature
www.DataSheet4U.com
Source-drain Diode Forward Characteristics
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet P12PF06.PDF ] | |
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