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PDF FQPF8N90C Data sheet ( Hoja de datos )
| Número de pieza | FQPF8N90C | |
| Descripción | 900V N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FQP8N90C/FQPF8N90C
900V N-Channel MOSFET
QFET®
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
www.DataSheet4U.com planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
• 6.3A, 900V, RDS(on) = 1.9Ω @VGS = 10 V
• Low gate charge ( typical 35 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
D
!
G!
●
◀▲
●
●
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
FQP8N90C FQPF8N90C
900
6.3 6.3 *
3.8 3.8 *
25 25 *
± 30
850
6.3
17.1
4.0
171 60
1.37 0.48
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP8N90C
0.73
0.5
62.5
FQPF8N90C
2.08
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, November 2003
1 page  
Typical Characteristics (Continued)
www.DataSheet4U.com
100
D =0 .5
1 0 -1
0.2
0.1
0.05
1 0 -2
0.02
0.01
sin gle p ulse
※ Notes :
1. Z θ JC(t) = 0.73 ℃ /W M ax.
2. D uty Factor, D =t /t
12
3 . T JM - T C = P DM * Z θ JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u are W a ve P u lse D u ratio n [se c]
101
Figure 11-1. Transient Thermal Response Curve for FQP8N90C
100 D = 0 .5
0 .2
0 .1
1 0 -1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
sin g le p u lse
※ N o tes :
1 . Z θ JC(t) = 2 .0 8 ℃ /W M a x.
2 . D uty F a cto r, D = t1/t2
3 . T JM - T C = P DM * Z θ JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u are W ave P ulse D u ra tio n [sec]
101
Figure 11-2. Transient Thermal Response Curve for FQPF8N90C
©2003 Fairchild Semiconductor Corporation
Rev. A, November 2003
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FQPF8N90C.PDF ] | |
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