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PDF K9F5608R0D Data sheet ( Hoja de datos )
| Número de pieza | K9F5608R0D | |
| Descripción | 32M x 8 Bit NAND Flash Memory | |
| Fabricantes | Samsung semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K9F5608R0D (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
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K9F5608R0D
K9F5608U0D K9F5608D0D
FLASH MEMORY
K9F5608X0D
www.DataSheet4U.com
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
1
1 page  
K9F5608R0D
K9F5608U0D K9F5608D0D
PIN CONFIGURATION (FBGA)
K9F5608X0D-JCB0/JIB0
Top View
12 3 4 5 6
FLASH MEMORY
N.C N.C
N.C N.C
www.DataSheet4U.com
A N.C
B
C
D
E
F
G
H
N.C N.C
/WP ALE Vss /CE /WE R/B
NC /RE CLE NC NC NC
NC NC NC NC NC NC
NC NC NC NC NC NC
NC NC NC NC NC NC
NC I/O0 NC NC NC Vcc
NC I/O1 NC VccQ I/O5 I/O7
Vss I/O2 I/O3 I/O4 I/O6 Vss
N.C N.C
N.C N.C
N.C N.C
PACKAGE DIMENSIONS
63-Ball FBGA (measured in millimeters)
N.C N.C
Top View
9.00±0.10
(Datum A)
Bottom View
9.00±0.10
0.80 x 9= 7.20
0.80 x 5= 4.00
0.80
654321
A
B
#A1
A
B
(Datum B) C
D
E
F
G
H
63-∅0.45±0.05
∅ 0.20 M A B
0.10MAX
2.00
Side View
9.00±0.10
0.45±0.05
5
5 Page 
K9F5608R0D
K9F5608U0D K9F5608D0D
FLASH MEMORY
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
Operat-
ing
Sequential
Read
Current Program
Erase
Stand-by Current(TTL)
Stand-by Cur-
rent(CMOS)
w w w . D a t a S h eIneptu4t LUea. kcaogemCurrent
Output Leakage Current
ICC1
ICC2
ICC3
ISB1
tRC=50ns, CE=VIL
IOUT=0mA
-
-
CE=VIH, WP=0V/VCC
ISB2 CE=VCC-0.2, WP=0V/VCC
ILI VIN=0 to Vcc(max)
ILO VOUT=0 to Vcc(max)
Input High Voltage
I/O pins
VIH*
Except I/O pins
Input Low Voltage, All
inputs
VIL*
-
Output High Voltage
Level
K9F5608R0D :IOH=-100µA
VOH K9F5608D0D :IOH=-100µA
K9F5608U0D :IOH=-400µA
Output Low Voltage
Level
K9F5608R0D :IOL=100uA
VOL K9F5608D0D :IOL=100µA
K9F5608U0D :IOL=2.1mA
K9F5608R0D :VOL=0.1V
Output Low Current(R/B) IOL(R/B) K9F5608D0D :VOL=0.1V
K9F5608U0D :VOL=0.4V
K9F5608X0D
1.8V
2.65V
3.3V
Unit
Min Typ Max Min Typ Max Min Typ Max
- 8 20 - 10 20 - 10 20
- 8 20 - 10 20 - 10 25 mA
- 8 20 - 10 20 - 10 25
- - 1 - - 1 --1
- 10 50 - 10 50 - 10 50
- - ±10 - - ±10 - - ±10 µA
- - ±10 - - ±10 - - ±10
VccQ
-0.4
-
VCCQ VCCQ
+0.3 -0.4
-
VCCQ
+0.3
2.0
-
VCCQ
+0.3
VCC
-0.4
-
VCC VCC
+0.3 -0.4
-
VCC
+0.3
2.0
-
VCC
+0.3
-0.3 - 0.4 -0.3 -
VCCQ
-0.1
-
-
VCCQ
-0.4
-
0.5 -0.3 - 0.8
V
- 2.4 - -
- - 0.1 - - 0.4 - - 0.4
3 4 - 3 4 - 8 10 - mA
NOTE : VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.
11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet K9F5608R0D.PDF ] | |
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