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PDF 5STP34Q5200 Data sheet ( Hoja de datos )
| Número de pieza | 5STP34Q5200 | |
| Descripción | Phase Control Thyristor | |
| Fabricantes | ABB | |
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VDSM = 5200 V
ITAVM = 3875 A
ITRMS = 6090 A
ITSM = 55000 A
VT0 = 1.03 V
rT = 0.160 mΩ
Phase Control Thyristor
5STP 34Q5200
Doc. No. 5SYA1052-01 Sep. 01
• Patented free-floating silicon technology
• Low on-state and switching losses
www.DataShee•t4U.comDesigned for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate
Blocking
Part Number 5STP
5STP 34Q5000 5STP 34Q4600 Conditions
VDSM
VRSM
5200 V
5000 V
4600 V f = 5 Hz, tp = 10ms
VDRM
VRSM1
VRRM
4400 V
5700 V
4200 V
5500 V
4000 V
5100 V
f = 50 Hz, tp = 10ms
tp = 5ms, single pulse
IDSM
IRSM
dV/dtcrit
≤ 500 mA
≤ 500 mA
2000 V/µs
VDSM
VRSM
Tj = 125°C
Exp. to 0.67 x VDRM, Tj = 125°C
VDRM/ VRRM are equal to VDSM/ VRSM values up to Tj = 110°C
Mechanical data
FM Mounting force
nom.
min.
max.
a Acceleration
Device unclamped
Device clamped
m Weight
DS Surface creepage distance
Da Air strike distance
90 kN
81 kN
108 kN
50 m/s2
100 m/s2
2.1 kg
36 mm
15 mm
ABB Semiconductors AG reserves the right to change specifications without notice.
1 page  
5STP 34Q5200
www.DataSheet4FUi.gc.om8 Gate trigger characteristics.
Fig. 9 Max. peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of on-
state current.
Fig. 11 Peak reverse recovery current vs. decay
rate of on-state current.
Turn - off time, typical parameter relationship.
Fig. 12 tq/tq1 = f1(Tj)
Fig. 13 tq/tq1 = f2(-diT/dt)
Fig. 14 tq/tq1 = f3(dv/dt)
tq = tq1 • f1(Tj) • f2(-diT/dt) • f3(dv/dt)
tq1 :at normalized values (see page 2)
tq : at varying conditions
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1052-01 Sep. 01
page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 5STP34Q5200.PDF ] | |
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