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TEMIC Semiconductors - (TE13004D / TE13005D) Silicon NPN High Voltage Switching Transistor

Numéro de référence TE13004D
Description (TE13004D / TE13005D) Silicon NPN High Voltage Switching Transistor
Fabricant TEMIC Semiconductors 
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TE13004D fiche technique
TE13004D TE13005D
Silicon NPN High Voltage Switching Transistor
Features
D Monolithic integrated C-E-free-wheel diode
D HIGH SPEED technology
D Planar passivation
D Very short switching times
D Very low switching losses
www.DataSheet4U.coDm Very low dynamic saturation
D Very low operating temperature
D High reverse voltage
14283
Applications
Electronic lamp ballast circuits
Switch-mode power supplies
Absolute Maximum Ratings
Tcase = 25°C, unless otherwise specified
Parameter
Collector-emitter voltage
Test Conditions
Emitter-base voltage
Collector current
Collector peak current
Base current
Base peak current
Total power dissipation
Junction temperature
Storage temperature range
Tcase 25° C
Type
TE13004D
TE13005D
TE13004D
TE13005D
Symbol
VCEO
VCEO
VCES
VCES
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Value
300
400
600
700
9
6
8
2
4
57
150
–65 to +150
Unit
V
V
V
V
V
A
A
A
A
W
°C
°C
Maximum Thermal Resistance
Tcase = 25°C, unless otherwise specified
Parameter
Junction case
Test Conditions
Symbol
RthJC
Value
2.2
Unit
K/W
TELEFUNKEN Semiconductors
Rev. A2, 18-Jul-97
1 (9)

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