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HY27SS08561M fiches techniques PDF

Hynix Semiconductor - (HY27xSxx561M) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

Numéro de référence HY27SS08561M
Description (HY27xSxx561M) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
Fabricant Hynix Semiconductor 
Logo Hynix Semiconductor 





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HY27SS08561M fiche technique
HY27SS(08/16)561M Series
HY27US(08/16)561M Series
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
Document Title
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory
Revision History
www.DataSheet4U.Ncoom.
0.0
0.1
0.2
0.3
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0.5
0.6
0.7
History
Initial Draft
Renewal Product Group
Append 1.8V Operation Product to Data sheet
Insert Spare Enable function for GND Pin(#6)
- In case of Reading or Programming, GND Pin(#6) should be Low
or High.
- Change the test condition of Stand-by current-Refer to Table 13.
Change CSP Package name & thickness
- Name : VFBGA -> FBGA
- Thickness : 1.0mm(max) -> 1.2mm(max)
1) Delete Cache Program Mode
2) Modify the description of Device Operations
- /CE Don’t Care Enabled(Disabled) -> Sequential Row Read
Disabled(Enabled) (Page23)
1) change FBGA dimension
: Thickness : 1.2mm(max) -> 1.0mm(max)
2) Edit Fig.33 read operation with CE don't care
1) Change TSOP1,WSOP1,FBGA package dimension
- Change TSOP1,WSOP1,FBGA mechanical data
- Inches parameter has been excluded from the mechanical data table
1) Change TSOP1, WSOP1, FBGA package dimension
2) Edit TSOP1, WSOP1 package figures
3) Change FBGA package figure
Draft Date
Jul. 10. 2003
Dec. 08. 2003
Dec. 08. 2003
Mar. 08. 2004
Jun. 01. 2004
Sep. 24. 2004
Oct. 18. 2004
Oct. 20. 2004
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 0.7 / Oct. 2004
1

PagesPages 30
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