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Numéro de référence | GFD25N03 | ||
Description | N-Channel Enhancement Mode MOSFET | ||
Fabricant | General Semiconductor | ||
Logo | |||
GFD25N03
N-Channel Enhancement-Mode MOSFET
TRENCHET Product®
GENF NewTO-252 (DPAK)
VDS 30V RDS(ON) 16.5mΩ ID 38A
D
G
0.265 (6.73)
0.255 (6.48)
0.214 (5.44)
www.DataSheet4U.co0m.206D(5.23)
0.094 (2.39)
0.087 (2.21)
0.050 (1.27)
0.035 (0.89)
0.245 (6.22)
0.235 (5.97)
GS
0.060 (1.52)
0.045 (1.14)
0.023 (0.58)
0.018 (0.46)
0.410 (10.41)
0.380 (9.65)
0.170 (4.32) min.
0.197 (5.00)
0.177 (4.49)
S
0.190
(4.826)
0.165
(4.191)
0.100
(2.54)
0.035 (0.89)
0.028 (0.71)
0.204 (5.18)
0.156 (3.96)
0.040 (1.02)
0.025 (0.64)
0.023 (0.58)
0.018 (0.46)
0.045 (1.14)
0.035 (0.89)
0.020 (0.51)
min.
0.009 (0.23)
0.001 (0.03)
Dimensions in inches
and (millimeters)
0.118
(3.0)
0.243
(6.172)
0.063
(1.6)
Mounting Pad Layout
Mechanical Data
Case: JEDEC TO-252 molded plastic body
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Weight: 0.011oz., 0.4g
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Low Voltage DC/DC Converters
• Fast Switching for High Efficiency
• Low Gate Charge
Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
VGS ±20
Continuous Drain Current
TJ = 150°C
Pulsed Drain Current(1)
TC = 25°C
TC = 70°C
ID
IDM
38
30
80
Power Dissipation
TJ = 150°C
TC = 25°C
TC = 70°C
TA = 25°C(2)
PD
38
24
2.5
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance(2)
RθJC
RθJA
3.3
50
Notes: (1) Pulse width limited by maximum junction temperature
(2) Surface mounted on a 1in2 2 oz.. Cu PCB (FR-4 material)
Unit
V
A
W
°C
°C/W
°C/W
9/17/01
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Pages | Pages 4 | ||
Télécharger | [ GFD25N03 ] |
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