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General Semiconductor - N-Channel Enhancement Mode MOSFET

Numéro de référence GFD25N03
Description N-Channel Enhancement Mode MOSFET
Fabricant General Semiconductor 
Logo General Semiconductor 





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GFD25N03 fiche technique
GFD25N03
N-Channel Enhancement-Mode MOSFET
TRENCHET Product®
GENF NewTO-252 (DPAK)
VDS 30V RDS(ON) 16.5mID 38A
D
G
0.265 (6.73)
0.255 (6.48)
0.214 (5.44)
www.DataSheet4U.co0m.206D(5.23)
0.094 (2.39)
0.087 (2.21)
0.050 (1.27)
0.035 (0.89)
0.245 (6.22)
0.235 (5.97)
GS
0.060 (1.52)
0.045 (1.14)
0.023 (0.58)
0.018 (0.46)
0.410 (10.41)
0.380 (9.65)
0.170 (4.32) min.
0.197 (5.00)
0.177 (4.49)
S
0.190
(4.826)
0.165
(4.191)
0.100
(2.54)
0.035 (0.89)
0.028 (0.71)
0.204 (5.18)
0.156 (3.96)
0.040 (1.02)
0.025 (0.64)
0.023 (0.58)
0.018 (0.46)
0.045 (1.14)
0.035 (0.89)
0.020 (0.51)
min.
0.009 (0.23)
0.001 (0.03)
Dimensions in inches
and (millimeters)
0.118
(3.0)
0.243
(6.172)
0.063
(1.6)
Mounting Pad Layout
Mechanical Data
Case: JEDEC TO-252 molded plastic body
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Weight: 0.011oz., 0.4g
Features
Advanced Trench Process Technology
High Density Cell Design for Ultra Low On-Resistance
Specially Designed for Low Voltage DC/DC Converters
Fast Switching for High Efficiency
Low Gate Charge
Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
VGS ±20
Continuous Drain Current
TJ = 150°C
Pulsed Drain Current(1)
TC = 25°C
TC = 70°C
ID
IDM
38
30
80
Power Dissipation
TJ = 150°C
TC = 25°C
TC = 70°C
TA = 25°C(2)
PD
38
24
2.5
Operating Junction and Storage Temperature Range
TJ, Tstg
55 to 150
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance(2)
RθJC
RθJA
3.3
50
Notes: (1) Pulse width limited by maximum junction temperature
(2) Surface mounted on a 1in2 2 oz.. Cu PCB (FR-4 material)
Unit
V
A
W
°C
°C/W
°C/W
9/17/01

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