|
|
Número de pieza | GFD2206 | |
Descripción | N-Channel Enhancement Mode MOSFET | |
Fabricantes | General Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de GFD2206 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! GFD2206
N-Channel Enhancement-Mode MOSFET
T FREENNCHET®
G TO-252 (DPAK)
0.265 (6.73)
0.255 (6.48)
0.214 (5.44)
www.DataSheet4U.co0m.206D(5.23)
0.094 (2.39)
0.087 (2.21)
0.050 (1.27)
0.035 (0.89)
0.023 (0.58)
0.018 (0.46)
VDS 60V RDS(ON) 22mΩ ID 42A
D
New Product G
S
0.190
(4.826)
0.170 (4.32) min.
0.245 (6.22)
0.235 (5.97)
0.410 (10.41)
0.060 (1.52)
0.380 (9.65)
GS
0.045 (1.14)
0.197 (5.00)
0.177 (4.49)
0.165
(4.191)
0.100
(2.54)
0.035 (0.89)
0.028 (0.71)
0.204 (5.18)
0.156 (3.96)
0.040 (1.02)
0.025 (0.64)
0.023 (0.58)
0.018 (0.46)
0.045 (1.14)
0.035 (0.89)
0.020 (0.51)
min.
0.009 (0.23)
0.001 (0.03)
Mechanical Data
Case: JEDEC TO-252 molded plastic body
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Weight: 0.011oz., 0.4g
0.118
(3.0)
Dimensions in inches
and (millimeters)
Features
0.243
(6.172)
0.063
(1.6)
Mounting Pad Layout
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Rugged-Avalanche Energy Rated
• Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
60
VGS ±20
Continuous Drain Current
VGS =10V
Pulsed Drain Current(1)
TC = 25°C
TC = 100°C
ID
IDM
42
26
100
Maximum Power Dissipation
Single Pulse Avalanche Energy(2)
Avalanche Current(1)
Repetitive Avalanche Energy(1)
TC = 25°C
PD
EAS
IAR
EAR
62.5
210
21
11
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance(3)
RθJC
RθJA
2
40
Notes: (1) Repetitive rating; pulse width limited by max. junction temperature
(2) VDD = 30V, starting TJ = 25°C, L = 470µH, RG = 25Ω, IAS = 21A
(3) Mounted on 1in2, 2oz. Cu pad on PCB
Unit
V
V
A
W
mJ
A
mJ
°C
°C/W
7/17/01
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet GFD2206.PDF ] |
Número de pieza | Descripción | Fabricantes |
GFD2206 | N-Channel Enhancement Mode MOSFET | General Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |