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PDF FMBM5551 Data sheet ( Hoja de datos )
| Número de pieza | FMBM5551 | |
| Descripción | NPN General Purpose Amplifier | |
| Fabricantes | Fairchild Semiconductor | |
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FMBM5551
NPN General Purpose Amplifier
• This device has matched dies
• Sourced from process 16.
• See MMBT5551 for characteristics
April 2005
www.DataSheet4U.com
C2
E1
C1
B2
E2
pin #1 B1
SuperSOTTM-6
Mark: .3S2
Dot denotes pin #1
Absolute Maximum Ratings *
Symbol
Parameter
Value
VCEO
VCBO
VEBO
IC
PC
TJ
TSTG
TθJA
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation (TC = 25°C)
Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
* Pd total, for both transistors. For each transistor, Pd = 350mW
160
180
6
600
0.7
150
-55 ~ 150
180
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Off Characteristics
BVCEO
BVCBO
BVEBO
ICBO
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Cut-off Current
IEBO
Emitter Cut-off Current
On Characteristics
hFE1
DIVID1
hFE2
DIVID2
DC Current Gain
Variation Ratio of hFE1 Between Die 1 and Die 2
DC Current Gain
Variation Ratio of hFE2 Between Die 1 and Die 2
IC = 1mA, IB = 0
IC = 100µA, IE = 0
IC = 10µA, IC = 0
VCB = 120V
VCB = 120V, Ta = 100°C
VEB = 4V
VCE = 5V, IC = 1mA
hFE1(Die1)/hFE1(Die2)
VCE = 5V, IC = 10mA
hFE2(Die1)/hFE2(Die2)
Units
V
V
V
mA
W
°C
°C
°C/W
Min. Max Units
160
180
6
50
50
50
V
V
V
nA
µA
nA
80
0.9
80
0.95
1.1
250
1.05
©2005 Fairchild Semiconductor Corporation
FMBM5551 Rev. D
1
www.fairchildsemi.com
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| PDF Descargar | [ Datasheet FMBM5551.PDF ] | |
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