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PDF HY27UG088GDM Data sheet ( Hoja de datos )
| Número de pieza | HY27UG088GDM | |
| Descripción | 8Gb NAND Flash | |
| Fabricantes | Hynix | |
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HY27UG088G(5/D)M Series
8Gbit (1Gx8bit) NAND Flash
www.DataSheet4U.com
8Gb NAND FLASH
HY27UG088G5M
HY27UG088GDM
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev. 0.6 / Dec. 2006
1
1 page  
HY27UG088G(5/D)M Series
8Gbit (1Gx8bit) NAND Flash
1. SUMMARY DESCRIPTION
The HYNIX HY27UG088G(5/D)M series is a 1Gx8bit with spare 32Mx8 bit capacity. The device is offered in 3.3V Vcc
Power Supply.
Its NAND cell provides the most cost-effective solution for the solid state mass storage market.
The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old
data is erased.
The device contains 8192 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected
Flash cells.
www.DataSheet4UA.cpormogram operation allows to write the 2112-byte page in typical 200us and an erase operation can be performed in
typical 2ms on a 128K-byte(X8 device) block.
Data in the page mode can be read out at 30ns cycle time per byte. The I/O pins serve as the ports for address and
data input/output as well as command input. This interface allows a reduced pin count and easy migration towards dif-
ferent densities, without any rearrangement of footprint.
Commands, Data and Addresses are synchronously introduced using CE, WE, ALE and CLE input pin.
The on-chip Program/Erase Controller automates all program and erase functions including pulse repetition, where
required, and internal verification and margining of data.
The modifying can be locked using the WP input pin.
The output pin R/B (open drain buffer) signals the status of the device during each operation. In a system with multi-
ple memories the R/B pins can be connected all together to provide a global status signal.
Even the write-intensive systems can take advantage of the HY27UG088G(2/5/D)M extended reliability of 100K pro-
gram/erase cycles by providing ECC (Error Correcting Code) with real time mapping-out algorithm.
The chip could be offered with the CE don’t care function. This function allows the direct download of the code from
the NAND Flash memory device by a microcontroller, since the CE transitions do not stop the read operation.
The copy back function allows the optimization of defective blocks management: when a page program operation fails
the data can be directly programmed in another page inside the same array section without the time consuming serial
data insertion phase.
The cache program feature allows the data insertion in the cache register while the data register is copied into the
flash array. This pipelined program operation improves the program throughput when long files are written inside the
memory.
A cache read feature is also implemented. This feature allows to dramatically improve the read throughput when con-
secutive pages have to be streamed out.
This device includes also extra features like OTP/Unique ID area, Read ID2 extension.
The HYNIX HY27UG088G(5/D)M series is available in 48 - TSOP1 12 x 20 mm, 52-ULGA 12 x 17 mm.
1.1 Product List
PART NUMBER
HY27UG088G5M
HY27UG088GDM
ORIZATION
x8
x8
VCC RANGE
2.7V - 3.6 Volt
2.7V - 3.6 Volt
PACKAGE
48TSOP1
52-ULGA
Rev. 0.6 / Dec. 2006
5
5 Page 
HY27UG088G(5/D)M Series
8Gbit (1Gx8bit) NAND Flash
CLE ALE CE WE RE WP
MODE
H L L Rising H X
Command Input
Read Mode
L H L Rising H X
Address Input(5 cycles)
H L L Rising H H
Command Input
Write Mode
L H L Rising H H
Address Input(5 cycles)
www.DataSheet4U.com L L L Rising H H Data Input
L L L(1) H Falling X Sequential Read and Data Output
L L L H H X During Read (Busy)
X X X X X H During Program (Busy)
X X X X X H During Erase (Busy)
X X X X X L Write Protect
X X H X X 0V/Vcc Stand By
Table 5: Mode Selection
NOTE:
1. With the CE high during latency time does not stop the read operation
Rev. 0.6 / Dec. 2006
11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet HY27UG088GDM.PDF ] | |
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