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PDF XB1008-QT Data sheet ( Hoja de datos )
| Número de pieza | XB1008-QT | |
| Descripción | 10.0-21.0 GHz GaAs MMIC Buffer Amplifier | |
| Fabricantes | Mimix Broadband | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de XB1008-QT (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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10.0-21.0 GHz GaAs MMIC
Buffer Amplifier, QFN
September 2007 - Rev 12-Sep-07
Features
Excellent Transmit LO/Output Buffer Stage
3x3mm, QFN
17.0 dB Small Signal Gain
+20.0 dBm Psat
+32 dBm Output IP3
4.5 dB Noise Figure
Variable Gain with Adjustable Bias
www.DataSheet4U.1c0om0% RF, DC and Output Power Testing
General Description
Mimix Broadband’s two stage 10.0-21.0 GHz GaAs
MMIC buffer amplifier has a small signal gain of 17.0
dB with a +19.0 dBm P1dB output compression point.
The device also provides variable gain regulation with
adjustable bias.The device is ideally suited as an LO or
RF buffer stage with broadband performance at a very
low cost.The device comes in an RoHS compliant
3x3mm QFN surface mount package offering excellent
RF and thermal properties.This device is well suited for
Microwave and Millimeter-wave Point-to-Point Radio,
LMDS, SATCOM and VSAT applications.
B1008-QT
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
180 mA
+0.3 VDC
+20.0 dBm
-65 to +165 OC
-55 to MTTF Graph1
MTTF Graph1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Noise Figure
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept
Drain Bias Voltage (Vd)
Gate Bias Voltage (Vg)
Supply Current (Id) (Vd=4.0V, Vg2=-0.5V Typical)
Units Min. Typ. Max.
GHz 10.0 - 21.0
dB - 12.0 -
dB - 12.0 -
dB - 17.0 -
dB - +/-2.0 -
dB - 65.0 -
dB - 4.5 -
dBm - +19.0 -
dBm - +20.0 -
dBm - +32.0 -
VDC - +4.0 +5.5
VDC -1.0 -0.1 0.0
mA - 90 -
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 6
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
1 page  
10.0-21.0 GHz GaAs MMIC
Buffer Amplifier, QFN
September 2007 - Rev 12-Sep-07
B1008-QT
App Note [1] Biasing - The device provides variable gain with adjustable bias regulation. For optimum linearity performance, it is recommended
to bias this device at Vd=4V with Id=90 mA. It is also recommended to use active biasing to control the drain currents because this gives the most
reproducible results over temperature or RF level variations. Depending on the supply voltage available and the power dissipation constraints, the
bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the
current.The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage.The typical gate voltage needed to do this is
-0.5V.Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure
negative gate bias is available before applying the positive drain supply.
MTTF Graphs
www.DataSheeTth4eUs.econmumbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
1.00E+09
XB1008-QT Vd=4.0 V Id=130 mA
1.00E+04
XB1008-QT Vd=4.0 V Id=130 mA
1.00E+08
1.00E+03
1.00E+07
1.00E+02
1.00E+06
1.00E+01
1.00E+05
55 65 75 85 95 105 115 125
Backplate Temperature (deg C)
1.00E+00
55 65 75 85 95 105 115 125
Backplate Temperature (deg C)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 6
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet XB1008-QT.PDF ] | |
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