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PDF FDP8874 Data sheet ( Hoja de datos )
| Número de pieza | FDP8874 | |
| Descripción | N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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November 2004
FDP8874
N-Channel PowerTrench® MOSFET
30V, 114A, 5.3mΩ
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
www.DataSheet4U.com either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
Applications
• DC/DC converters
Features
• rDS(ON) = 5.3mΩ, VGS = 10V, ID = 40A
• rDS(ON) = 6.6mΩ, VGS = 4.5V, ID = 40A
• High performance trench technology for extremely low
rDS(ON)
• Low gate charge
• High power and current handling capability
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
G
TO-220AB
FDP SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V) (Note 1)
Continuous (TC = 25oC, VGS = 4.5V) (Note 1)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
Thermal Resistance Junction to Case TO-220
Thermal Resistance Junction to Ambient TO-220 ( Note 3)
Package Marking and Ordering Information
Device Marking
FDP8874
FDP8874
Device
FDP8874
FDP8874_NL (Note 4)
Package
TO-220AB
TO-220AB
Reel Size
Tube
Tube
D
S
Ratings
30
±20
114
102
16
Figure 4
105
110
0.73
-55 to 175
1.36
62
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
Tape Width
N/A
N/A
Quantity
50 units
50 units
©2004 Fairchild Semiconductor Corporation
FDP8874 Rev. A2
1 page  
Typical Characteristics TC = 25°C unless otherwise noted
1.2 1.10
VGS = VDS, ID = 250µA
ID = 250µA
1.0 1.05
0.8 1.00
0.6
www.DataSheet4U.com
0.4
-80
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
0.95
0.90
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
5000
1000
CRSS = CGD
CISS = CGS + CGD
COSS ≅ CDS + CGD
VGS = 0V, f = 1MHz
100
0.1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 13. Capacitance vs Drain to Source
Voltage
10
VDD = 15V
8
6
4
WAVEFORMS IN
2 DESCENDING ORDER:
ID = 40A
ID = 1A
0
0 10 20 30 40 50 60
Qg, GATE CHARGE (nC)
Figure 14. Gate Charge Waveforms for Constant
Gate Current
©2004 Fairchild Semiconductor Corporation
FDP8874 Rev. A2
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FDP8874.PDF ] | |
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