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Toshiba Semiconductor - SM16JZ47A

Numéro de référence M16JZ47
Description SM16JZ47A
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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M16JZ47 fiche technique
SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A
TOSHIBA BIDIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A
AC POWER CONTROL APPLICATIONS
l Repetitive Peak OffState Voltage : VDRM = 400, 600V
l R.M.S OnState Current
: IT (RMS) = 16A
l High Commutating (dv / dt)
l Isolation Voltage
: VISOL = 1500V AC
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MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
OffState Voltage
SM16GZ47
SM16GZ47A
SM16JZ47
SM16JZ47A
R.M.S OnState Current
(Full Sine Waveform Tc = 73°C)
Peak One Cycle Surge OnState
Current (NonRepetitive)
I2t Limit Value
Critical Rate of Rise of OnState
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1 min.)
SYMBOL
VDRM
IT (RMS)
ITSM
I2t
di / dt
PGM
PG (AV)
VGM
IGM
Tj
Tstg
VISOL
RATING
400
600
16
150 (50Hz)
165 (60Hz)
112.5
50
5
0.5
10
2
40~125
40~125
1500
UNIT
V
A
A
A2s
A / µs
W
W
V
A
°C
°C
V
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: 1.7g
1310H1A
Note 1:
di / dt Test condition
VDRM = 0.5 × Rated
ITM 25A
tgw 10µs
tgr 250ns
iGP = IGT × 2.0
1 2001-07-13

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