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PDF HMF2M32B4V Data sheet ( Hoja de datos )
| Número de pieza | HMF2M32B4V | |
| Descripción | FLASH-ROM MODULE | |
| Fabricantes | Hanbit Electronics | |
| Logotipo |  |
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HANBit
HMF2M32B4V
Flash-ROM Module 8MByte (2Mx32Bit), 72Pin-SO-DIMM, 3.3V
Design
Part No. HMF2M32B4V
GENERAL DESCRIPTION
The HMF2M32B4V is a high-speed flash read only memory (FROM) module containing 4,194,304 words organized in a
x32bit configuration. The module consists of four 1M x 16 FROM mounted on a 72-pin SO-DIMM type, single - sided, FR4-
printed circuit board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the
device is similar to reading from 12.0V flash or EPROM devices.
www.DataSheet4U.Ocoumtput enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or
erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits.
When FROM module is disable condition the module is becoming power standby mode, system designer can get low-power
design. All module components may be powered from a single + 3.0V DC power supply and all inputs and outputs are LVTTL-
compatible.
FEATURES
w Access time: 70, 80, 90, 120ns
w High-density 8MByte design
w High-reliability, low-power design
w Single + 3.0V ± 0.5V power supply
w All in/outputs are LVTTL-compatible
w FR4-PCB design
w Minimum 1,000,000 write/erase cycle
w Sector erases architecture
OPTIONS
w Timing
70ns access
80ns access
90ns access
120ns access
w Packages
72-pin SO-DIMM
MARKING
-70
-80
-90
-120
B
PIN ASSIGNMENT
PIN Symbol PIN Symbol PIN Symbol PIN Symbol
1 Vss 21 DQ15 41 DQ29 61
2
/RESET
22
NC
(/CE_4L)
42
3
DQ0
23
NC
(/CE_3H)
43
DQ30
DQ31
62
63
4 DQ1 24 DQ16 44 NC 64
5
DQ2
25
DQ17
45
NC
(/CE_4H)
65
6
DQ3
26
DQ18
46
NC
(/CE_3H)
66
7 DQ4 27 DQ19 47 A19 67
A8
A7
A6
A5
A4
A3
A2
8 DQ5 28 DQ20 48 /OE 68
A1
9 DQ6 29 DQ21 49 /WE 69
A0
10 Vcc 30 Vcc 50 A18 70 A20
11 DQ7 31 DQ22 51 A17 71 NC
12 /CE_1L 32 DQ23 52 A16 72 Vss
13 /CE_2L 33 /CE_1H 53
A15
14 DQ8 34 /CE_2H 54
A14
15 DQ9 35 DQ24 55
A13
16 DQ10 36 DQ25 56
A12
17 DQ11 37 DQ26 57
A11
18 DQ12 38 DQ27 58
A10
19 DQ13 39 Vss 59 Vcc
20 DQ14 40 DQ28 60
A9
URL :www.hbe.co.kr
REV.02(August,2002)
1 HANBit Electronics Co., Ltd.
1 page  
HANBit
www.DataSheet4U.com
Device
Under
Test
CL
5.0V
IN3064
or Equivalent
2.7kΩ
HMF2M32B4V
6.2kΩ
Diodes = IN3064
or Equivalent
Note : CL = 100pF including jig capacitance
u Erase/Program Operations
PARAMETER SYMBOLS
JEDEC STANDARD
DESCRIPTION
tAVAV
tWC Write Cycle Time
tAVWL
tAS Address Setup Time
tWLAX
tAH Address Hold Time
tDVWH
tDS Data Setup Time
tWHDX
tDH Data Hold Time
tOES Output Enable Setup Time
tGHWL
tGHWL
Read Recover Time Before Write
tELWL
tCS /CE Setup Time
tWHEH
tCH /CE Hold Time
tWLWH
tWP Write Pulse Width
tWHWL
tWPH Write Pulse Width High
tWHWH1
tWHWH1
Byte Programming Operation
tWHWH2
tWHWH2
Sector Erase Operation (Note1)
tVCS Vcc set up time
Notes : 1 . This does not include the preprogramming time
2 . This timing is only for Sector Protect operations
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Min
Speed Options
70R 80
90 120
70 80
90 12
0
45 45
45 50
35 35
45 50
0
0
0
0
0
35 35
35 50
30
9
0.7
50
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
sec
µs
URL :www.hbe.co.kr
REV.02(August,2002)
5 HANBit Electronics Co., Ltd.
5 Page 
HANBit
PACKAGE DIMENSIONS
<TOP VIEW>
HMF2M32B4V
www.DataSheet4U.com
URL :www.hbe.co.kr
REV.02(August,2002)
2.2 mm MAX
1.0 ± 0.1mm
11
HANBit Electronics Co., Ltd.
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet HMF2M32B4V.PDF ] | |
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