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PDF UTCHLB124 Data sheet ( Hoja de datos )
| Número de pieza | UTCHLB124 | |
| Descripción | NPN EPITAXIAL SILICON TRANSISTOR | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UTCHLB124 NPN EPITAXIAL SILICON TRANSISTOR
NPN EPITAXIAL PLANAR TRANSISTOR
DESCRIPTION
The UTC HLB124 is designed for high voltage, high
speed switching inductive circuits, and amplifier
applications.
FEATURES
* High Speed Switching
www.DataSheet*4ULo.cwomSaturation Voltage
* High Reliability
1
TO-220
1: BASE 2: COLLECTOR 3: EMITTER
*Pb-free plating product number: HLB124L
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (PULSE)
Base Current (DC)
Base Current (PULSE)
Total Power Dissipation (Tc=25℃)
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
Ic
ICP
IB
IBP
Pc
TJ
TSTG
RATINGS
600
400
8
2
4
1
2
35
150
-40 ~ +150
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified.)
PARAMETER
SYMBOL
Collector-Base Breakdown Voltage
BVCBO
Collector-Emitter Breakdown Voltage
BVCEO
Emitter-Base Breakdown Voltage
BVEBO
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
C-E Saturation Voltage
*VCE (sat) 1
*VCE (sat) 2
B-E Saturation Voltage
*VBE (sat) 1
*VBE (sat) 2
*hFE1
DC Current Gain
*hFE2
*hFE3
Gain-Bandwidth Product
fT
*Pulse Test : Pulse Width ≤ 380µs, Duty Cycle ≤ 2%
CLASSIFICATION OF HFE1
TEST CONDITIONS
IC = 1mA
IC = 10mA
IE = 1mA
VCB = 600V
VEB = 9V, IC = 0
IC = 0.1A, IB = 10mA
IC = 0.3A, IB = 30mA
IC = 0.1A, IB = 10mA
IC = 0.3A, IB = 30mA
VCE = 5V, IC = 0.3A
VCE = 5V, IC = 0.5A
VCE = 5V, IC = 1A
VCE = 10V, IC = 0.3A, f=1MHz
UTC UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com.tw
UNIT
V
V
V
A
A
A
A
W
℃
℃
MIN TYP MAX UNIT
600 V
400 V
8V
10 µA
10 µA
0.3 V
0.8 V
0.9 V
1.2 V
10 40
10
6
15 MHz
1
QW-R203-029,A
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet UTCHLB124.PDF ] | |
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