DataSheetWiki


NP80N055NHE fiches techniques PDF

NEC - (NP80N055xHE) MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

Numéro de référence NP80N055NHE
Description (NP80N055xHE) MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
Fabricant NEC 
Logo NEC 





1 Page

No Preview Available !





NP80N055NHE fiche technique
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N055EHE, NP80N055KHE
NP80N055CHE, NP80N055DHE, NP80N055MHE, NP80N055NHE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
www.DataSheet4UT.choemse products are N-channel MOS Field Effect Transistors designed for high current switching applications.
<R> ORDERING INFORMATION
PART NUMBER
NP80N055EHE-E1-AY Note1, 2
NP80N055EHE-E2-AY Note1, 2
NP80N055KHE-E1-AY Note1
NP80N055KHE-E2-AY Note1
NP80N055CHE-S12-AZ Note1, 2
NP80N055DHE-S12-AY Note1, 2
NP80N055MHE-S18-AY Note1
NP80N055NHE-S18-AY Note1
LEAD PLATING
Pure Sn (Tin)
Sn-Ag-Cu
Pure Sn (Tin)
PACKING
Tape 800 p/reel
Tube 50 p/tube
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
2. Not for new design
PACKAGE
TO-263 (MP-25ZJ) typ. 1.4 g
TO-263 (MP-25ZK) typ. 1.5 g
TO-220 (MP-25) typ. 1.9 g
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
(TO-220)
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A)
Low input capacitance
Ciss = 2400 pF TYP.
Built-in gate protection diode
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14096EJ7V0DS00 (7th edition)
Date Published October 2007 NS
2002, 2007
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

PagesPages 10
Télécharger [ NP80N055NHE ]


Fiche technique recommandé

No Description détaillée Fabricant
NP80N055NHE (NP80N055xHE) MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET NEC
NEC

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche