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PDF KA5M0765RC Data sheet ( Hoja de datos )
| Número de pieza | KA5M0765RC | |
| Descripción | SPS | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Preliminary
KA5M0765RC
SPS
SPS
The SPS product family is specially designed for an off-line SMPS
with minimal external components. The SPS consist of high voltage
power SenseFET and current mode PWM IC.
Included PWM controller features integrated fixed frequency
oscillator, under voltage lock-out, leading edge blanking, optimized
gate turn-on/turn-off driver, thermal shutdown protection, over
voltage protection, and temperature compensated precision current
sources for loop compensation and fault protection circuitry.
Compared to discrete MOSFET and PWM controller or RCC
www.DataSshoeluetti4oUn.,coam SPS can reduce total component count, design size,
weight and at the same time increase efficiency, productivity, and
system reliability.
It has a basic platform well suited for cost-effective design in either a
flyback converter or a forward converter.
TO-220F-5L
1. GND 2. Drain 3. Vcc 4. FB
FEATURES
• Precision fixed operating frequency (70kHz)
• Low start-up current (Typ. 100mA)
• Pulse by pulse current limiting
• Over current protection
• Over voltage protection (Min. 25V)
• Internal thermal shutdown function
• Under voltage lockout
• Internal high voltage sense FET
• Auto-restart mode
BLOCK DIAGRAM
ORDERING INFORMATION
Device
KA5M0765RC
Package
TO-220F-5L
Topr (°C)
−25°C to +85°C
1999 Fairchild Semiconductor Corporation
REV. B
1 page  
Preliminary
KA5M0765RC
TYPICAL PERFORMANCE CHARACTERISTICS (SFET part)
SPS
Fig 1. Output Characteristics
VGS
10
Top: 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
Bottom:4.5V
www.DataSheet4U.com
1
@Notes:
1. 300µs PulseTest
2. TC = 25oC
0.1
1
10
VDS, Drain-Source Voltage [V]
Fig. 2 Transfer Characteristics
10
150oC
1
25oC
0.1
2
-25oC
@Notes:
1. VDS = 30V
2. 300µs PulseTest
468
VGS, Gate-Source Voltage [V]
10
Fig. 3 On-Resistance vs. Drain Current
3.0
2.5
2.0 Vgs=10V
1.5
Vgs=20V
1.0
0.5
@ Note : Tj=25
0.0
0 2 4 6 8 10
ID,Drain Current [A]
Fig.5 Capacitance vs. Drain-Source Voltage
1800
1600
1400
1200
1000
800
600
400
200
0
1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
Coss
Crss
10
VDS, Drain-Source Voltage [V]
Fig. 4 Source-Drain Diode Forward Voltage
10
1
150 oC
25 oC
@Notes:
1. VGS = 0V
2. 300µ sPulseTest
0.1
0.4
0.6 0.8 1.0 1.2
VSD, Source-Drain Voltage [V]
1.4
Fig. 6 Gate Charge vs. Gate-Source Voltage
10
VDS=130V
8 VDS=320V
VDS=520V
6
4
2
@Note: ID=3.0A
0
0 5 10 15 20 25
QG,Total Gate Charge [nC]
5 Page | ||
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| PDF Descargar | [ Datasheet KA5M0765RC.PDF ] | |
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