DataSheetWiki


PBMB50B12 fiches techniques PDF

Nihon Inter Electronics - IGBT MODULE

Numéro de référence PBMB50B12
Description IGBT MODULE
Fabricant Nihon Inter Electronics 
Logo Nihon Inter Electronics 





1 Page

No Preview Available !





PBMB50B12 fiche technique
IGBT MODULE H-Bridge 50A 1200V
CIRCUIT
PBMB50B12
OUTLINE DRAWING
P
G1
E1
U
G2
N
E2
G3
E3
V
G4
E4
8- fasten-tabNo 110
4- fasten-tabNo 250
Dimension(mm)
www.DataSheet4U.com
MAXMUM RATINGS (Tc=25°C)
Item
Symbol
PBMB50B12
Collector-Emitter Voltage
Gate - Emitter Voltage
Collector Current
DC
1 ms
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
Isolation Voltage Terminal to Base AC, 1 min.)
Mounting Torque
Module Base to Heatsink
Bus Bar to Main Terminals
VCES
VGES
IC
ICP
PC
Tj
Tstg
VISO
FTOR
1200
+/ - 20
50
100
250
-40 to +150
-40 to +125
2500
2
-
ELECTRICAL CHARACTERISTICS (Tc=25°C)
Characteristic
Symbol
Test Condition
Min.
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
ICES VCE=1200V,VGE=0V
IGES VGE=+/- 20V,VCE=0V
-
-
Collector-Emitter Saturation Voltage
VCE(sat) IC=50A,VGE=15V
-
Gate-Emitter Threshold Voltage
Input Capacitance
VGE(th)
Cies
VCE=5V,IC=50mA
VCE=10V,VGE=0V,f=1MHz
4.0
-
Switching Time
Rise Time
Turn-on Time
Fall Time
Turn-off Time
tr VCC= 600V
ton RL= 12 ohm
tf RG= 20 ohm
toff VGE= +/- 15V
-
-
-
-
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)
Item
Symbol
Rated Value
Forward Current
DC
1 ms
IF
IFM
50
100
Approximate Weight : 200g
Unit
V
V
A
W
°C
°C
V
Nm
Typ.
-
-
1.9
-
4200
0.25
0.40
0.25
0.80
Max.
1.0
1.0
2.4
8.0
-
0.45
0.70
0.35
1.10
Unit
mA
µA
V
V
pF
µs
Unit
A
Characteristic
Symbol
Peak Forward Voltage
VF
Reverse Recovery Time
trr
THERMAL CHARACTERISTICS
Characteristic
Thermal Impedance
IGBT
DIODE
Test Condition
IF=50A,VGE=0V
IF=50A,VGE=-10V,di/dt=100A/µs
Symbol
Rth(j-c)
Test Condition
Junction to Case
Min. Typ. Max. Unit
- 1.9 2.4 V
- 0.2 0.3 µs
Min. Typ. Max. Unit
-
-
-
-
0.5
1.0
°C/W

PagesPages 3
Télécharger [ PBMB50B12 ]


Fiche technique recommandé

No Description détaillée Fabricant
PBMB50B12 IGBT MODULE Nihon Inter Electronics
Nihon Inter Electronics
PBMB50B12C IGBT MODULE Nihon Inter Electronics
Nihon Inter Electronics

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche