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M29DW128G fiches techniques PDF

Numonyx - Flash memory

Numéro de référence M29DW128G
Description Flash memory
Fabricant Numonyx 
Logo Numonyx 





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M29DW128G fiche technique
M29DW128G
128 Mbit (8 Mb x 16, multiple bank, page, dual boot)
3 V supply Flash memory
Data Brief
Features
Supply voltage
www.DataSheet4U.com– VCC = 2.7 to 3.6 V for Program, Erase and
Read
– VPP =12 V for Fast Program (optional)
Asynchronous Random/Page Read
– Page width: 8 words
– Page access: 25 ns
– Random access: 60 ns
Programming time
– 15 µs per byte/word (typical)
– 32-word write buffer
Erase verify
Memory blocks
– Quadruple bank memory array:
16 Mbit+48 Mbit+48 Mbit+16 Mbit
– Parameter blocks (at top and bottom)
Dual operation
– While Program or Erase in one bank, Read
in any of the other banks
Program/Erase Suspend and Resume modes
– Read from any block during Program
Suspend
– Read and Program another block during
Erase Suspend
Unlock Bypass Program
– Faster production/batch programming
Common Flash interface
– 64 bit security code
100,000 Program/Erase cycles per block
TSOP56 (NF)
14 x 20 mm
BGA
TBGA64 (ZA)
10 x 13 mm
Low power consumption
– Standby and automatic standby
Hardware block protection
– VPP/WP pin for fast program and write
protect of the four outermost parameter
blocks
Security features
– Standard protection
– Password protection
– Additional block protection
Extended memory block
– Extra block used as security block or to
store additional information
Electronic signature
– Manufacturer code: 0020h
– Device code: 227Eh+2220h+2200h
ECOPACK® packages available
December 2007
Rev 2
For further information contact your local STMicroelectronics sales office.
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