|
|
PDF HX6656 Data sheet ( Hoja de datos )
| Número de pieza | HX6656 | |
| Descripción | 32K x 8 ROM-SOI | |
| Fabricantes | Honeywell | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de HX6656 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
Military & Space Products
32K x 8 ROM—SOI
FEATURES
RADIATION
• Fabricated with RICMOS™ IV Silicon on Insulator
(SOI) 0.75 µm Process (Leff = 0.6 µm)
• Total Dose Hardness through 1x106 rad(SiO2)
• Dynamic and Static Transient Upset
www.DataSheet4U.Hcoamrdness through 1x109 rad(Si)/s
• Dose Rate Survivability through 1x1011 rad(Si)/s
• Neutron Hardness through 1x1014 cm-2
• SEU Immune
• Latchup Free
HX6656
OTHER
• Read Cycle Times
< 17 ns (Typical)
≤ 25 ns (-55 to 125°C)
• Typical Operating Power <15 mW/MHz
• Asynchronous Operation
• CMOS or TTL Compatible I/O
• Single 5 V ± 10% Power Supply
• Packaging Options
- 28-Lead Flat Pack (0.500 in. x 0.720 in.)
- 28-Lead DIP, MIL-STD-1835, CDIP2-T28
- 36-Lead Flat Pack (0.630 in. x 0.650 in.)
GENERAL DESCRIPTION
The 32K x 8 Radiation Hardened ROM is a high perform-
ance 32,768 word x 8-bit read only memory with industry-
standard functionality. It is fabricated with Honeywell’s
radiation hardened technology, and is designed for use in
systems operating in radiation environments. The ROM
operates over the full military temperature range and re-
quires only a single 5 V ± 10% power supply. The ROM is
available with either TTL or CMOS compatible I/O. Power
consumption is typically less than 15 mW/MHz in operation,
and less than 5 mW when de-selected. The ROM operation
is fully asynchronous, with an associated typical access
time of 14 ns.
Honeywell’s enhanced SOI RICMOS™ IV (Radiation Insen-
sitive CMOS) technology is radiation hardened through the
use of advanced and proprietary design, layout, and pro-
cess hardening techniques. The RICMOS™ IV process is a
5-volt, SIMOX CMOS technology with a 150 Å gate oxide
and a minimum drawn feature size of 0.75 µm (0.6 µm
effective gate length—Leff). Additional features include
tungsten via plugs, Honeywell’s proprietary SHARP pla-
narization process, and a lightly doped drain (LDD) struc-
ture for improved short channel reliability.
1 page  
HX6656
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IDDSB1 Static Supply Current
Typical Worst Case (2)
(1) Min Max
Units
1.5 mA
IDDSBMF Standby Supply Current - Deselected
1.5 mA
IDDOPR Dynamic Supply Current, Selected
4.0 mA
II Input Leakage Current
-1 +1 µA
IOZ Output Leakage Current
-1 +1 µA
VIL Low-Level Input Voltage
CMOS
TTL
0.3xVDD
0.8
V
V
Test Conditions
VIH=VDD IO=0
VIL=VSS Inputs Stable
NCS=VDD, IO=0,
f=40 MHz
f=1 MHz, IO=0, CE=VIH=VDD
NCS=VIL=VSS
VSS≤VI≤VDD
VSS≤VIO≤VDD
Output=high Z
VDD = 4.5V
www.DataSheet4U.com
VIH
High-Level Input Voltage
CMOS
TTL
0.7xVDD
2.2
V
V VDD = 5.5V
VOL
Low-Level Output Voltage
0.4 V VDD = 4.5V, IOL = 10 mA
0.05 V VDD = 4.5V, IOL = 200 µA
VOH
High-Level Output Voltage
4.2
VDD-0.05
V VDD = 4.5V, IOH = -5 mA
V VDD = 4.5V, IOH = -200 µA
(1) Typical operating conditions: VDD= 5.0 V,TA=25°C, pre-radiation.
(2) Worst case operating conditions: VDD=4.5 V to 5.5 V, -55°C to +125°C, post total dose at 25°C.
(3) All inputs switching. DC average current.
DUT
output
2.9 V
249Ω
+
Vref1 -
Vref2 +
-
Valid high
output
Valid low
output
CL >50 pF*
*CL = 5 pF for TWLQZ, TSHQZ, TELQZ, and TGHQZ
Tester Equivalent Load Circuit
5
5 Page 
DYNAMIC BURN-IN DIAGRAM*
F16 R 1 A14
F7 R 2 A12
F6 R 3 A7
F5 R 4 A6
F4 R 5 A5
F3 R 6 A4
F2 R 7 A3
F8 R 8 A2
F13 R 9 A1
F14 R 10 A0
F1 R 11 DQ0
www.DataSheet4U.comF1
F1
R 12 DQ1
R 13 DQ2
VSS
14 VSS
VDD 28
NC 27
A13 26
A8 25
A9 24
A11 23
NOE 22
A10 21
NCS 20
DQ7 19
DQ6 18
DQ5 17
DQ4 16
DQ3 15
VDD
R F0
R F15
R F12
R F11
R F10
R F17
R F9
R F17
R F1
R F1
R F1
R F1
R F1
HX6656
STATIC BURN-IN DIAGRAM*
VDD
R
R
R
R
R
R
R
R
R
R
R
R
R
VSS
1 A14
2 A12
3 A7
4 A6
5 A5
6 A4
7 A3
8 A2
9 A1
10 A0
11 DQ0
12 DQ1
13 DQ2
14 VSS
VDD 28
NC 27
A13 26
A8 25
A9 24
A11 23
NOE 22
A10 21
NCS 20
DQ7 19
DQ6 18
DQ5 17
DQ4 16
DQ3 15
VDD
R
R
R
R
R
R
R
R
R
R
R
R
R
R
VDD = 6.5V, R ≤ 10 KΩ, VIH = VDD, VIL = VSS
Ambient Temperature ≥ 125 °C, F0 ≥ 100 KHz Sq Wave
Frequency of F1 = F0/2, F2 = F0/4, F3 = F0/8, etc.
VDD = 5.5V, R ≤ 10 KΩ
Ambient Temperature ≥ 125 °C
*36-lead Flat Pack burn-in diagrams have similar connections and are available on request.
ROM CODE
The ROM code can be provided to Honeywell via FTP, E-Mail or a variety of magnetic storage media, including
3.5 inch floppy disc, 4m digital tape and others.
The ROM Code data file should contain the following format:
<address> [/] <data> [;] [Comment]
Where items enclosed in ‘[‘and’]’ are optional.
The address and data must be hex numbers in the form, MSB...LSB. The “/” and the “;” are optional and any
characters after the “#” are comments. For example the following input file, all of the lines are valid:
000 d4
001 / 32
002 1d
003 / 72;
4/5e; # all of these lines are in valid format
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet HX6656.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HX6656 | 32K x 8 ROM-SOI | Honeywell |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |