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Toshiba Semiconductor - RF SPDT Switch

Numéro de référence TG2210FT
Description RF SPDT Switch
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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TG2210FT fiche technique
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
TG2210FT
RF SPDT Switch
TG2210FT
Switch the receive filter for mobile communication.
Switch the diversity antenna.
Switch the local signal.
Features
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· Low insertion Loss: LOSS = 0.4dB (typ.)
· High isolation: ISL = 30dB (typ.)
· Low voltage operation: VC = 0 V/2.5 V
· Small package: TU6 package (2.0 × 1.25 × 0.6 mm)
Pin Connection, Marking (top view)
VC1 RFcom VC2
654
Weight: 0.008 g (typ.)
UL
123
RF2 GND RF1
Maximum Ratings (Ta = 25°C)
Characteristics
Control voltage
Input power
Operating temperature range
Storage temperature range
Symbol
VC1
VC2
Pi
Topr
Tstg
Rating
5
5
1
-40~85
-55~125
Unit
V
V
W
°C
°C
Caution
This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and
equipment are earthed.
1 2002-07-30

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