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Toshiba Semiconductor - GaAs Linear Integrated Circuit GaAs Monolithic

Numéro de référence TG2211FT
Description GaAs Linear Integrated Circuit GaAs Monolithic
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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TG2211FT fiche technique
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
TG2211FT
RF SPDT Switch
TG2211FT
Antenna switches for Bluetooth class 2 and 3
Switch the diversity antenna
Switch the receive filter for mobile communication
Switch the local signal
Features
www.DataSheet4U.com
· Fewer external parts: On-chip inverter circuit
· Low insertion Loss: LOSS = 0.45dB (typ.) @1.0 GHz
= 0.55dB (typ.) @2.5 GHz
· High isolation: ISL = 25dB (typ.) @1.0 GHz
= 24dB (typ.) @2.5 GHz
· Low voltage operation: VCON = 0 V/2.7 V
· Small package: TU6 package (mold size = 2.0 × 1.25 × 0.6
mm)
Weight: 0.008 g (typ.)
Pin Connection and Marking (top view)
Equivalent Circuit
VCON RFcom
65
VDD
4
VCON RFcom
65
VDD
4
UM
123
RF1 GND RF2
123
RF1 GND RF2
Maximum Ratings (Ta = 25°C)
Characteristics
Supply voltage
Control voltage
Input power
Operating temperature range
Storage temperature range
Symbol
VDD
VCON
Pi
Topr
Tstg
Rating
6
6
350
40~85
55~125
Unit
V
V
mW
°C
°C
1 2002-07-30

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