IRF1902UPBF Datasheet PDF - International Rectifier
| Part Number | IRF1902UPBF | |
| Description | HEXFET Power MOSFET | |
| Manufacturers | International Rectifier | |
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There is a preview and IRF1902UPBF download ( pdf file ) link at the bottom of this page. Total 9 Pages | ||
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l Ultra Low On-Resistance
l N-Channel MOSFET
l Surface Mount
www.DataSheet4U.com l
l
Available in Tape & Reel
Lead-Free
VDSS
20V
PD - 96066B
IRF1902UPbF
HEXFET® Power MOSFET
RDS(on) max (mW)
85@VGS = 4.5V
170@VGS = 2.7V
ID
4.0A
3.2A
Description
These N-Channel HEXFET® Power MOSFETs from S 1
International Rectifier utilize advanced processing S 2
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
S
3
with an extremely efficient device for use in battery G 4
and load management applications.
AA
8D
7D
6D
5D
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
TJ, TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJL
RθJA
www.irf.com
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Max.
20
4.2
3.4
17
2.5
1.6
0.02
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
09/18/06
|
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IRF1902UPbF
5.0
4.0
www.DataSheet4U.com 3.0
2.0
1.0
0.0
25
50 75 100
TC, Case Temperature
125
( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
10 0.20
0.10
0.05
0.02
1 0.01
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJA
+TA
0.1 1
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
10
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRF1902UPBF electronic component. |
| Information | Total 9 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IRF1902UPBF.PDF Datasheet ] | |
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| Part Number | Description | MFRS |
| IRF1902UPBF | The function is HEXFET Power MOSFET. International Rectifier | |
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