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PDF EFA040A-70 Data sheet ( Hoja de datos )
| Número de pieza | EFA040A-70 | |
| Descripción | Low Distortion GaAs Power FET | |
| Fabricantes | Execlics | |
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Excelics
EFA040A-70
DATA SHEET
Low Distortion GaAs Power FET
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www.DataSheet4U.com
NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
+22.0dBm TYPICAL OUTPUT POWER
8.0dB TYPICAL POWER GAIN AT 12GHz
0.3 X 400 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
20
D
SS
G
44
19
4
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P1dB
G1dB
PAE
Output Power at 1dB Compression
Vds=6V, Ids=50% Idss
Gain at 1dB Compression
Vds=6V, Ids=50% Idss
Gain at 1dB Compression
Vds=6V, Ids=50% Idss
f=12GHz
f=18GHz
f=12GHz
f=18GHz
f=12GHz
Idss Saturated Drain Current Vds=3V, Vgs=0V
Gm
Transconductance
Vds=3V, Vgs=0V
Vp
Pinch-off Voltage
Vds=3V, Ids=1.0 mA
BVgd
Drain Breakdown Voltage Igd=1.0mA
BVgs
Source Breakdown Voltage Igs=1.0mA
Rth Thermal Resistance
* Overall Rth depends on case mounting.
All Dimensions In mils.
MIN
20.0
6.5
60
TYP
22.0
22.0
8.0
5.0
33
105
MAX UNIT
dBm
dB
%
160 mA
45 60
mS
-2.0 -3.5 V
-10 -15
V
-6 -14
250*
V
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS
ABSOLUTE1 CONTINUOUS2
Vds
Drain-Source Voltage
10V
6V
Vgs Gate-Source Voltage -6V
-4V
Ids Drain Current
Idss
75mA
Igsf
Forward Gate Current
10mA
1.5mA
Pin Input Power
21dBm
@ 3dB Compression
Tch Channel Temperature 175oC
150 oC
Tstg Storage Temperature
-65/175oC
-65/150 oC
Pt
Total Power Dissipation
550mW
445mW
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
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