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Execlics - Low Distortion GaAs Power FET

Numéro de référence EFA060B-70
Description Low Distortion GaAs Power FET
Fabricant Execlics 
Logo Execlics 





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EFA060B-70 fiche technique
Excelics
EFA060B-70
DATA SHEET
Low Distortion GaAs Power FET
www.DataSheet4U.com
NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
+24.0dBm TYPICAL OUTPUT POWER
7.5 dB TYPICAL POWER GAIN AT 12GHz
0.3 X 600 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P1dB
G1dB
PAE
Output Power at 1dB Compression
f=12GHz
Vds=6V, Ids=50% Idss
f=18GHz
Gain at 1dB Compression
f=12GHz
Vds=6V, Ids=50% Idss
f=18GHz
Power Added Efficiency at 1dB Compression
Vds=6V, Ids=50% Idss
f=12GHz
Idss Saturated Drain Current Vds=3V, Vgs=0V
Gm
Transconductance
Vds=3V, Vgs=0V
Vp
Pinch-off Voltage
Vds=3V, Ids=1.5mA
BVgd
Drain Breakdown Voltage Igd=1.0mA
BVgs
Source Breakdown Voltage Igs=1.0mA
Rth Thermal Resistance
* Overall Rth depends on case mounting.
20
D
SS
G
All Dimensions In mils.
MIN
22.0
6.0
100
TYP
24.0
24.0
7.5
5.0
33
170
MAX UNIT
dBm
dB
%
240 mA
70 90
mS
-2.0 -3.5 V
-10 -15
V
-6 -14
175*
V
oC/W
44
19
4
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS
ABSOLUTE1 CONTINUOUS2
Vds
Drain-Source Voltage
10V
6V
Vgs Gate-Source Voltage -6V
-4V
Ids Drain Current
Idss
110mA
Igsf
Forward Gate Current
15mA
2.5mA
Pin Input Power
22dBm
@ 3dB Compression
Tch Channel Temperature 175oC
150 oC
Tstg Storage Temperature
-65/175oC
-65/150 oC
Pt
Total Power Dissipation
780mW
650mW
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

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