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PDF S8550 Data sheet ( Hoja de datos )
| Número de pieza | S8550 | |
| Descripción | Si APD array | |
| Fabricantes | Hamamatsu Corporation | |
| Logotipo |  |
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 1. V(br)cbo = -40V, PNP Transistor  Hay una vista previa y un enlace de descarga de S8550 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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APD
Si APD array
S8550
4 × 8 element APD array with low noise and enhanced short-wavelength sensitivity
S8550 is an APD (avalanche photodiode) array designed for short wavelength detection, featuring low noise and low terminal capacitance. S8550
also offers uniform gain and small cross-talk between each element.
Features
lwww.DataSheet4U.com
High sensitivity and low noise in short wavelength region
l Low terminal capacitance
l Optimized for blue light detection
l Uniform gain and low cross-talk variation between
each element
Applications
l Low-light-level photometry in the visible range
l Detector systems combined with scintillator
s General ratings
Parameter
Element size
Element pitch
Package
Window material
Rating
1.6 × 1.6 (× 32 elements)
2.3
Ceramic
Epoxy resin
s Absolute maximum ratings
Parameter
Operating temperature
Storage temperature
Symbol
Topr
Tstg
Value
-20 to +60
-20 to +80
s Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
Spectral response range
λ
Peak sensitivity wavelength
λp M=50
Quantum efficiency
QE λ=420 nm
Breakdown voltage
VBR
Dark current
ID per 1 element, M=50
Terminal capacitance
Ct
per 1 element, M=50,
f=10 kHz
Gain
M
Min.
-
-
60
-
-
-
-
Typ.
320 to 1000
600
70
400
10
10
50
Max.
-
-
-
500
50
-
-
Unit
mm
mm
-
-
Unit
°C
°C
Unit
nm
nm
%
V
nA
pF
-
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet S8550.PDF ] | |
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