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ST Microelectronics - STE53NA50

Numéro de référence 53NA50
Description STE53NA50
Fabricant ST Microelectronics 
Logo ST Microelectronics 





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53NA50 fiche technique
STE53NA50
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
VDSS
RDS(on)
ID
ST E53NA50
500 V < 0.085 53 A
www.DataSheet4U.com
s TYPICAL RDS(on) = 0.075
s HIGH CURRENT POWER MODULE
s AVALANCHE RUGGED TECHNOLOGY
s VERY LARGE SOA - LARGE PEAK POWER
CAPABILITY
s EASY TO MOUNT
s SAME CURRENT CAPABILITY FOR THE
TWO SOURCE TERMINALS
s EXTREMELY LOW Rth (Junction to case)
s VERY LOW INTERNAL PARASITIC
INDUCTANCE
s ISOLATED PACKAGE UL RECOGNIZED
APPLICATIONS
s SMPS & UPS
s MOTOR CONTROL
s WELDING EQUIPMENT
s OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
V D GR
V GS
ID
ID
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM() Drain Current (pulsed)
Pto t Total Dissipation at Tc = 25 oC
Derating Factor
Tst g St orage Temperature
Tj Max. Operating Junction Temperature
VISO Insulation Withhstand Voltage (AC-RMS)
() Pulse width limited by safe operating area
February 1998
Va l u e
500
500
± 30
53
33
212
460
3.68
-55 to 150
150
2500
Unit
V
V
V
A
A
A
W
W/oC
oC
oC
V
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