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EIC discrete Semiconductors - (11DF1 / 11DF2) ULTRA FAST RECTIFIER DIODES

Numéro de référence 11DF2
Description (11DF1 / 11DF2) ULTRA FAST RECTIFIER DIODES
Fabricant EIC discrete Semiconductors 
Logo EIC discrete Semiconductors 





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11DF2 fiche technique
11DF1 - 11DF2
PRV : 100 - 200 Volts
Io : 1.0 Ampere
FEATURES :
* High current capability
* High surge current capability
www.DataSheet4U.com * High reliability
* Low reverse current
* Low forward voltage drop
* Superfast recovery time
ULTRA FAST RECTIFIER DIODES
DO - 41
0.107 (2.7)
0.080 (2.0)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Ta = 63 °C
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave
Superimposed on rated load (JEDEC Method)
Maximum Peak Forward Voltage at IF = 1.0 A
Maximum DC Reverse Current at VRRM
Maximum Reverse Recovery Time ( Note 1 )
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IF(AV)
IFSM
VF
IR
Trr
TJ
TSTG
Note : ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
11DF1
11DF2
100 200
70 140
100 200
1.0
30
0.98
10
35
- 65 to + 150
- 65 to + 150
UNIT
V
V
V
A
A
V
µA
ns
°C
°C
Page 1 of 2
Rev. 02 : October 8, 2005

PagesPages 2
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