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Weitron Technology - (BC556 - BC558) PNP General Purpose Transistor

Numéro de référence BC556B
Description (BC556 - BC558) PNP General Purpose Transistor
Fabricant Weitron Technology 
Logo Weitron Technology 





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BC556B fiche technique
PNP General Purpose Transistor
Maximumwww.DataSheet4U.com Ratings ( TA=25 C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Symbol
VECO
VCBO
VEBO
lC
BC556
-65
-80
-5
BC556, A/B
BC557, A/B/C
BC558, A/B/C
COLLECTOR
3
2
BASE
1
EMITTER
TO-92
1
2
3
BC557
-45
-50
-5
100
BC558
-30
-30
-5
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation
Alumina Substrate, TA = 25 C
BC556
BC557
BC558
Junction and Storage, Temperature
BC556
BC557
BC558
Symbol
PD
TJ, Tstg
Max
625
-55 to +150
Unit
mW/ C
C
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC= 2 mAdc. lB=0)
Collector-Base Breakdown Voltage
(lC= 100 mAdc. lE=0)
Emitter-Base Breakdown Voltage
(lE = 100 mAdc. lC=0)
Symbol Min Max
Unit
BC556
BC557
BC558
BC556
BC557
BC558
BC556
BC557
BC558
V(BR)CEO
-65
-45
-30
V(BR)CBO
-80
-50
-30
V(BR)EBO -5
Vdc
Vdc
Vdc
WEITRON
http://www.weitron.com.tw
1/5
26-Apr-05

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