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PDF JANTX2N3846 Data sheet ( Hoja de datos )
| Número de pieza | JANTX2N3846 | |
| Descripción | (JANTX2N384x) NPN POWER SILICON TRANSISTOR | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/412
Devices
www.DataSheet4U.com
2N3846
2N3847
TECHNICAL DATA
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +250C (1)
@ TC = +1000C (2)
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 26.6 mW/0C to +1750C
2) Derate linearly 2 W/0C to +1750C
Symbol
VCEO
VCBO
VEBO
IC
PT
Top, Tstg
Symbol
RθJC
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc; IB = 0
2N3846
2N3847
Collector-Emitter Cutoff Current
VCE = 300 Vdc; VBE = 0
2N3846
VCE = 400 Vdc; VBE = 0
Collector-Emitter Cutoff Current
2N3847
VCE = 200 Vdc; IB = 0
2N3846
VCE = 300 Vdc; IB = 0
Emitter-Base Cutoff Current
2N3847
VBE = 10 Vdc; IC = 0
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
2N3846 2N3847
200 300
300 400
10
20
4.0
150
-65 to +200
Units
Vdc
Vdc
Vdc
Adc
W
W
0C
Max.
0.5
Unit
0C/W
TO-63*
Symbol
*See Appendix A for Package
Outline
Min. Max.
Unit
V(BR)CEO
ICES
ICEO
IEBO
200 Vdc
300
2 mAdc
2
5 mAdc
5
250 µAdc
120101
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| Número de pieza | Descripción | Fabricantes |
| JANTX2N3846 | (JANTX2N384x) NPN POWER SILICON TRANSISTOR | Microsemi Corporation |
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