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Daesan Electronics - SIGNAL BIDIRECTIONAL DIAC

Numéro de référence DB3
Description SIGNAL BIDIRECTIONAL DIAC
Fabricant Daesan Electronics 
Logo Daesan Electronics 





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DB3 fiche technique
DB3 / DB4
SIGNAL BIDIRECTIONAL
DIAC
Features
The three layer, two terminal, axial lead,
hermetically sealed diacs are designed
specifically for triggering thyristors.
www.DataTShheeeyt4Ud.ecommonstrate low breakover current
at breakover voltage as they withstand
peak pulse current. The breakover
symmetry is within three volts.
These diacs are intended for use in
thyristors phase control, circuits for lamp
dimming, universal motor speed control,
and heat control
DEC's DB3/DB4 are bi-directional trigged
diode designed to operate in conjunction
with Triacs and SCR's
DO-35(GLASS)
R-1
0.075(1.9)
MAX.
DIA.
1.083(27.5)
MIN.
0.102(2.6)
0.091(2.3)
DIA.
0.154(3.9)
MAX.
0.020(0.52)
MAX.
DIA.
1.083(27.5)
MIN.
0.025(0.65)
0.021(0.55)
DIA.
Dimensions in inches and (millimeters)
Absolute Ratings (Limiting Values)
Symbols
Pc
ITRM
TSTG/TJ
Parameters
Power Dissipation on Printed
Circuit(L=10mm)
TA=50
Repetitive Peak on-state
Current
tp=10 s
F=100Hz
Storage and Operating Junction Temperature
Value
DB3 DB4
150
2.0 2.0
-40 to +125/-40 to 110
0.787(20.0)
MIN.
0.126(3.2)
0.106(2.7)
0.787(20.0)
MIN.
Units
mW
A
Electrical characteristics
Symbols
Parameters
Test Conditions
VBO Breakover Voltage (Note 2)
|+VBO|-
| - VBO|
| V|
VO
IBO
tr
IB
Breakover Voltage Symmetry
Dynamic Breakover Voltage (Note 1)
Output Voltage (Note 1)
Breakover Current (Note 1)
Rise Time (Note 1)
Leakage Current (Note 1)
C=22nF(Note2)
See diagram 1
C=22nF(Note2)
See diagram 1
I=(IBO to IF=10mA)
See diagram 1
See diagram 2
C=22nF(Note2)
See diagram 3
VB=0.5 VBO max
see diagram 1
Min
Typ
Max
Max
Min
Min
Max
Typ
Max
Notes:
(1) Electrical characteristics applicable in both forward and reverse directions
(2) Connected in parallel with the devices
DB3
28
32
36
Value
3
5
5
100
1.5
10
DB4
35
40
45
Units
V
V
V
V
A
S
A

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